Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures

S. Calvez; A.H. Clark; J.M. Hopkins; P. Merlin; H.D. Sun; M.D. Dawson; T. Jouhti; M. Pessa

Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures

S. Calvez, A.H. Clark, J.M. Hopkins, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa

Institute Of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.

Original language	English
Number of pages	2
Publication status	Published - Nov 2002
Event	15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society - Glasgow, UK Duration: 10 Nov 2002 → 14 Nov 2002

Conference

Conference	15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
City	Glasgow, UK
Period	10/11/02 → 14/11/02

Keywords

1.3 micron
1297.2 nm
213 muW
GaInNAs wells
GaInNAs-GaAs
GaInNAs-based amplifier technology
GaInNAs/GaAs VCSELs
GaInNAs/GaAs VCSOAs
amplification
design
simplification
fibre-coupled CW diode pumping
laser action
monolithic structures
optical pumping
surface emitting lasers
vertical-cavity semiconductor optical amplifiers

Cite this

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title = "Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures",

abstract = "We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.",

keywords = "1.3 micron, 1297.2 nm, 213 muW, GaInNAs wells, GaInNAs-GaAs, GaInNAs-based amplifier technology, GaInNAs/GaAs VCSELs, GaInNAs/GaAs VCSOAs, amplification, design, simplification, fibre-coupled CW diode pumping, laser action, monolithic structures, optical pumping, surface emitting lasers, vertical-cavity semiconductor optical amplifiers",

author = "S. Calvez and A.H. Clark and J.M. Hopkins and P. Merlin and H.D. Sun and M.D. Dawson and T. Jouhti and M. Pessa",

year = "2002",

month = nov,

language = "English",

note = "15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society ; Conference date: 10-11-2002 Through 14-11-2002",

}

TY - CONF

T1 - Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures

AU - Calvez, S.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Merlin, P.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

PY - 2002/11

Y1 - 2002/11

N2 - We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.

AB - We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.

KW - 1.3 micron

KW - 1297.2 nm

KW - 213 muW

KW - GaInNAs wells

KW - GaInNAs-GaAs

KW - GaInNAs-based amplifier technology

KW - GaInNAs/GaAs VCSELs

KW - GaInNAs/GaAs VCSOAs

KW - amplification

KW - design

KW - simplification

KW - fibre-coupled CW diode pumping

KW - laser action

KW - monolithic structures

KW - optical pumping

KW - surface emitting lasers

KW - vertical-cavity semiconductor optical amplifiers

UR - http://ieeexplore.ieee.org/iel5/8179/24583/01133979.pdf?tp=&isnumber=&arnumber=1133979

UR - http://dx.doi.org/10.1109/LEOS.2002.1133979

M3 - Paper

T2 - 15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society

Y2 - 10 November 2002 through 14 November 2002

ER -

Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures

Abstract

Conference

Keywords

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