Amorphous silicon thin-film transistors on compliant polyimide foil substrates

Helena Gleskova, Sigurd Wagner

Research output: Contribution to journalArticlepeer-review

88 Citations (Scopus)

Abstract

Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.
Original languageEnglish
Pages (from-to)473-475
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number9
DOIs
Publication statusPublished - 1 Sep 1999

Keywords

  • silicon thin-film transistors
  • polyimide foil substrates
  • polymer films

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