Abstract
Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.
Original language | English |
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Pages (from-to) | 473-475 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 20 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1 Sept 1999 |
Keywords
- silicon thin-film transistors
- polyimide foil substrates
- polymer films