Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays

I. C. Cheng, S. Wagner, A. Z. Kattamis, B. Hekmatshoar, K. H. Cherenack , Helena Gleskova, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays
Original languageEnglish
Title of host publicationIDMC ‘07
Subtitle of host publicationproceedings of the international display manufacturing conference 2007
EditorsC. H. Chen, Y. S. Tsai
Place of PublicationTaipei
Pages311-314
Number of pages4
Publication statusPublished - 2007
Event7th International Display Manufacturing Conference 2007 (IDMC ‘07) - Taipei, Taiwan, Province of China
Duration: 3 Jul 20076 Jul 2007

Conference

Conference7th International Display Manufacturing Conference 2007 (IDMC ‘07)
CountryTaiwan, Province of China
CityTaipei
Period3/07/076/07/07

Keywords

  • amorphous
  • silicon thin film transistors
  • backplanes
  • fabricated
  • high temperature

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  • Cite this

    Cheng, I. C., Wagner, S., Kattamis, A. Z., Hekmatshoar, B., Cherenack , K. H., Gleskova, H., & Sturm, J. C. (2007). Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays. In C. H. Chen, & Y. S. Tsai (Eds.), IDMC ‘07: proceedings of the international display manufacturing conference 2007 (pp. 311-314). Taipei.