Amorphous Si TFTs on plastically deformed spherical domes

P. I. Hsu, H. Gleskova, M. Huang, Z. Suo, S. Wagner, J. C. Sturm

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

There is a growing interest in the design and fabrication of flexible and rugged
electronics particularly for large-area displays and sensor arrays. In this work, we describe the fabrication of amorphous silicon (a-Si:H) thin film transistors (TFTs) on a Kapton substrate which can be permanently deformed into a spherical cap shape. This level of strain would crack uniform a-Si:H device films. To prevent fractures in our TFT structure, the silicon and silicon nitride layers of the TFTs are patterned to create isolated device islands. After deformation, these brittle islands can remain crack-free, and the TFTs achieve comparable device behavior despite average strain in the substrate in excess of 5%.
Original languageEnglish
Pages (from-to)1355-1359
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume299-302
Issue numberPart 2
DOIs
Publication statusPublished - 1 Apr 2002
Event19th International Conference on Amorphous and Microcrystalline Semiconductors - Nice, France
Duration: 27 Aug 200131 Aug 2001

Keywords

  • large-area displays
  • sensor arrays
  • spherical domes

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