Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

Krishna Chytanya Chinnam, Swati Gupta, Helena Gleskova

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Abstract

We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7 V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The electrical breakdown field of the bi-layer gate dielectric is at least 5 MV/cm for all AlOx preparation conditions.
Original languageEnglish
Pages (from-to)2512-2515
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume358
Issue number17
Early online date1 Feb 2012
DOIs
Publication statusPublished - 1 Sep 2012
Event24th International Conference on Amorphous and Nanocrystalline Semiconductors - Nara, Japan
Duration: 22 Aug 201126 Aug 2011

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Keywords

  • organic thin-film transistor
  • pentacene
  • alkylphosphonic acid
  • aluminium oxide
  • UV/ozone exposure
  • low-voltage organic
  • thin-film transistors

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