Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

Krishna Chytanya Chinnam, Swati Gupta, Helena Gleskova

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7 V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The electrical breakdown field of the bi-layer gate dielectric is at least 5 MV/cm for all AlOx preparation conditions.
LanguageEnglish
Pages2512-2515
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume358
Issue number17
Early online date1 Feb 2012
DOIs
Publication statusPublished - 1 Sep 2012
Event24th International Conference on Amorphous and Nanocrystalline Semiconductors - Nara, Japan
Duration: 22 Aug 201126 Aug 2011

Fingerprint

Aluminum Oxide
Ozone
Thin film transistors
Threshold voltage
low voltage
ozone
transistors
aluminum oxides
Gate dielectrics
Aluminum
Oxides
threshold voltage
Electric potential
thin films
preparation
Leakage currents
Acids
electrical faults
leakage
aluminum

Keywords

  • organic thin-film transistor
  • pentacene
  • alkylphosphonic acid
  • aluminium oxide
  • UV/ozone exposure
  • low-voltage organic
  • thin-film transistors

Cite this

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title = "Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors",
abstract = "We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7 V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The electrical breakdown field of the bi-layer gate dielectric is at least 5 MV/cm for all AlOx preparation conditions.",
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Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors. / Chinnam, Krishna Chytanya; Gupta, Swati; Gleskova, Helena.

In: Journal of Non-Crystalline Solids, Vol. 358, No. 17, 01.09.2012, p. 2512-2515.

Research output: Contribution to journalArticle

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T1 - Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin-film transistors

AU - Chinnam, Krishna Chytanya

AU - Gupta, Swati

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AB - We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7 V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The electrical breakdown field of the bi-layer gate dielectric is at least 5 MV/cm for all AlOx preparation conditions.

KW - organic thin-film transistor

KW - pentacene

KW - alkylphosphonic acid

KW - aluminium oxide

KW - UV/ozone exposure

KW - low-voltage organic

KW - thin-film transistors

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