Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation

Stuart Hannah; Helena Gleskova

Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V

comparison with UV-ozone oxidation

Stuart Hannah, Helena Gleskova

Electronic And Electrical Engineering

Research output: Contribution to conference › Poster

27 Downloads (Pure)

Abstract

Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

Original language	English
Publication status	Published - 11 Jun 2014
Event	The 10th International Conference on Organic Electronics - San Geminiano Complex, Modena, Italy Duration: 11 Jun 2014 → 13 Jun 2014

Conference

Conference	The 10th International Conference on Organic Electronics
Abbreviated title	ICOE 2014
Country	Italy
City	Modena
Period	11/06/14 → 13/06/14

Fingerprint

Atomic layer deposition

Aluminum Oxide

Ozone

Thin film transistors

Thin film circuits

Aluminum

Oxidation

Vacuum evaporation

Oxides

Monolayers

Transistors

Fabrication

Acids

n-octylphosphonic acid

Keywords

roll-to-roll fabrication
thin-film circuits
aluminium oxide
organic thin-film transistors (OTFTs)

Cite this

Hannah, S., & Gleskova, H. (2014). Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.

Hannah, Stuart ; Gleskova, Helena. / Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V : comparison with UV-ozone oxidation. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.

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abstract = "Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.",

keywords = "roll-to-roll fabrication, thin-film circuits, aluminium oxide, organic thin-film transistors (OTFTs)",

author = "Stuart Hannah and Helena Gleskova",

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note = "The 10th International Conference on Organic Electronics, ICOE 2014 ; Conference date: 11-06-2014 Through 13-06-2014",

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Hannah, S & Gleskova, H 2014, 'Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation' The 10th International Conference on Organic Electronics, Modena, Italy, 11/06/14 - 13/06/14, .

Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V : comparison with UV-ozone oxidation. / Hannah, Stuart ; Gleskova, Helena.

2014. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.

Research output: Contribution to conference › Poster

TY - CONF

T1 - Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V

T2 - comparison with UV-ozone oxidation

AU - Hannah, Stuart

AU - Gleskova, Helena

PY - 2014/6/11

Y1 - 2014/6/11

N2 - Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

AB - Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

KW - roll-to-roll fabrication

KW - thin-film circuits

KW - aluminium oxide

KW - organic thin-film transistors (OTFTs)

UR - http://archivio.edunova.it/icoe2014/

M3 - Poster

ER -

Hannah S , Gleskova H. Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation. 2014. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.