Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation

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Abstract

Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.
Original languageEnglish
Publication statusPublished - 11 Jun 2014
EventThe 10th International Conference on Organic Electronics - San Geminiano Complex, Modena, Italy
Duration: 11 Jun 201413 Jun 2014

Conference

ConferenceThe 10th International Conference on Organic Electronics
Abbreviated titleICOE 2014
CountryItaly
CityModena
Period11/06/1413/06/14

Keywords

  • roll-to-roll fabrication
  • thin-film circuits
  • aluminium oxide
  • organic thin-film transistors (OTFTs)

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    Hannah, S., & Gleskova, H. (2014). Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.