Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation

Research output: Contribution to conferencePoster

Abstract

Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

Conference

ConferenceThe 10th International Conference on Organic Electronics
Abbreviated titleICOE 2014
CountryItaly
CityModena
Period11/06/1413/06/14

Fingerprint

Atomic layer deposition
Aluminum Oxide
Ozone
Thin film transistors
Thin film circuits
Aluminum
Oxidation
Vacuum evaporation
Oxides
Monolayers
Transistors
Fabrication
Acids
n-octylphosphonic acid

Keywords

  • roll-to-roll fabrication
  • thin-film circuits
  • aluminium oxide
  • organic thin-film transistors (OTFTs)

Cite this

Hannah, S., & Gleskova, H. (2014). Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.
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abstract = "Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.",
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author = "Stuart Hannah and Helena Gleskova",
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note = "The 10th International Conference on Organic Electronics, ICOE 2014 ; Conference date: 11-06-2014 Through 13-06-2014",

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Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V : comparison with UV-ozone oxidation. / Hannah, Stuart; Gleskova, Helena.

2014. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.

Research output: Contribution to conferencePoster

TY - CONF

T1 - Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V

T2 - comparison with UV-ozone oxidation

AU - Hannah, Stuart

AU - Gleskova, Helena

PY - 2014/6/11

Y1 - 2014/6/11

N2 - Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

AB - Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

KW - roll-to-roll fabrication

KW - thin-film circuits

KW - aluminium oxide

KW - organic thin-film transistors (OTFTs)

UR - http://archivio.edunova.it/icoe2014/

M3 - Poster

ER -

Hannah S, Gleskova H. Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation. 2014. Poster session presented at The 10th International Conference on Organic Electronics, Modena, Italy.