Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation

Stuart Hannah; Helena Gleskova

Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation

Stuart Hannah, Helena Gleskova

Electronic And Electrical Engineering

Research output: Contribution to conference › Poster › peer-review

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Abstract

Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

Original language	English
Publication status	Published - 11 Jun 2014
Event	The 10th International Conference on Organic Electronics - San Geminiano Complex, Modena, Italy Duration: 11 Jun 2014 → 13 Jun 2014

Conference

Conference	The 10th International Conference on Organic Electronics
Abbreviated title	ICOE 2014
Country	Italy
City	Modena
Period	11/06/14 → 13/06/14

Keywords

roll-to-roll fabrication
thin-film circuits
aluminium oxide
organic thin-film transistors (OTFTs)

Access to Document

Hannah-Gleskova-ICOE-2014-organic-thin-film-transistors-operating-at-2-VAccepted author manuscript, 677 KB

http://archivio.edunova.it/icoe2014/

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Epsrc Doctoral Training Grant | Hannah, Stuart
Gleskova, H., Uttamchandani, D. & Hannah, S.
EPSRC (Engineering and Physical Sciences Research Council)
1/10/13 → 9/07/17
Project: Research Studentship - Internally Allocated

Cite this

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title = "Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation",

abstract = "Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.",

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N2 - Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

AB - Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs). Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer.

KW - roll-to-roll fabrication

KW - thin-film circuits

KW - aluminium oxide

KW - organic thin-film transistors (OTFTs)

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M3 - Poster

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ER -

Aluminium oxide prepared by atomic layer deposition in organic thin film transistors operating at 2 V: comparison with UV-ozone oxidation

Abstract

Conference

Keywords

Access to Document

Epsrc Doctoral Training Grant | Hannah, Stuart

Cite this