Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations

P.G. Middleton; C. Trager-Cowan; K.P. O'Donnell; T.S. Cheng; S.E. Hooper; C.T. Foxon

doi:10.1016/S0921-5107(96)01853-3

Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations

P.G. Middleton, C. Trager-Cowan, K.P. O'Donnell, T.S. Cheng, S.E. Hooper, C.T. Foxon

Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (III)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.

Original language	English
Pages (from-to)	154-156
Number of pages	3
Journal	Materials Science and Engineering B
Volume	43
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(96)01853-3
Publication status	Published - 1 Jan 1997

Keywords

molecular beam epitaxy
photoluminescence
substrates

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10.1016/S0921-5107(96)01853-3

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abstract = "Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (III)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.",

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AU - Middleton, P.G.

AU - Trager-Cowan, C.

AU - O'Donnell, K.P.

AU - Cheng, T.S.

AU - Hooper, S.E.

AU - Foxon, C.T.

PY - 1997/1/1

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N2 - Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (III)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.

AB - Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (III)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.

KW - molecular beam epitaxy

KW - photoluminescence

KW - substrates

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U2 - 10.1016/S0921-5107(96)01853-3

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IS - 1-3

ER -

Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations

Abstract

Keywords

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