Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations

P.G. Middleton, C. Trager-Cowan, K.P. O'Donnell, T.S. Cheng, S.E. Hooper, C.T. Foxon

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (III)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.

Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalMaterials Science and Engineering B
Volume43
Issue number1-3
DOIs
Publication statusPublished - 1 Jan 1997

Keywords

  • molecular beam epitaxy
  • photoluminescence
  • substrates

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