TY - JOUR
T1 - Alternative substrates for gallium nitride epitaxy
T2 - photoluminescence and morphological investigations
AU - Middleton, P.G.
AU - Trager-Cowan, C.
AU - O'Donnell, K.P.
AU - Cheng, T.S.
AU - Hooper, S.E.
AU - Foxon, C.T.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (III)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.
AB - Gallium nitride films grown by molecular beam epitaxy (MBE) on (0001) sapphire, lithium gallate and gallium arsenide (III)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are further explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent surface morphology.
KW - molecular beam epitaxy
KW - photoluminescence
KW - substrates
UR - http://www.scopus.com/inward/record.url?scp=0000701953&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(96)01853-3
DO - 10.1016/S0921-5107(96)01853-3
M3 - Article
AN - SCOPUS:0000701953
VL - 43
SP - 154
EP - 156
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
SN - 0921-5107
IS - 1-3
ER -