Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties

K. Lorenz, S. Magalhaes, N. Franco, N. P. Barradas, V. Darakchieva, E. Alves, S. Pereira, M. R. Correia, F. Munnik, R. W. Martin, K. P. O'Donnell, I. M. Watson

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

High quality Al1-xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x = 0.13 to 0.24. Up to x = 0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smooth surface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, the mechanisms leading to relaxation of compressive strain are very different in the two samples grown both at similar temperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneously distributed with depth. The other sample started to grow with x = 0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x similar to 0.17. Both samples have an increased surface roughness. All samples show strong Al1-xInxN band edge luminescence with large bowing parameter and Stokes' shifts. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Original languageEnglish
Pages (from-to)1740-1746
Number of pages7
JournalPhysica Status Solidi B
Volume247
Issue number7
Early online date8 Jun 2010
DOIs
Publication statusPublished - Jul 2010

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Optical properties
Organic Chemicals
optical properties
Strain relaxation
Bending (forming)
Organic chemicals
Rutherford backscattering spectroscopy
Growth temperature
Spectrometry
Luminescence
Chemical vapor deposition
Surface roughness
Metals
Crystalline materials
Chemical analysis
metalorganic chemical vapor deposition
backscattering
surface roughness
Temperature
luminescence

Keywords

  • photoluminescence
  • Rutherford backscattering spectrometry
  • surface structure
  • III-V semiconductors
  • field-effect transistor
  • alinn
  • alloys
  • growth
  • layers
  • movpe
  • GaN
  • optics

Cite this

Lorenz, K., Magalhaes, S., Franco, N., Barradas, N. P., Darakchieva, V., Alves, E., ... Watson, I. M. (2010). Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties. Physica Status Solidi B, 247(7), 1740-1746. https://doi.org/10.1002/pssb.200983656
Lorenz, K. ; Magalhaes, S. ; Franco, N. ; Barradas, N. P. ; Darakchieva, V. ; Alves, E. ; Pereira, S. ; Correia, M. R. ; Munnik, F. ; Martin, R. W. ; O'Donnell, K. P. ; Watson, I. M. / Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties. In: Physica Status Solidi B. 2010 ; Vol. 247, No. 7. pp. 1740-1746.
@article{965d270667234be99095464bf3001c91,
title = "Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties",
abstract = "High quality Al1-xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x = 0.13 to 0.24. Up to x = 0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smooth surface with V-shaped pits. Two layers with InN contents around 24{\%} showed partial strain relaxation. However, the mechanisms leading to relaxation of compressive strain are very different in the two samples grown both at similar temperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneously distributed with depth. The other sample started to grow with x = 0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x similar to 0.17. Both samples have an increased surface roughness. All samples show strong Al1-xInxN band edge luminescence with large bowing parameter and Stokes' shifts. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
keywords = "photoluminescence, Rutherford backscattering spectrometry, surface structure, III-V semiconductors, field-effect transistor, alinn, alloys, growth, layers, movpe, GaN, optics",
author = "K. Lorenz and S. Magalhaes and N. Franco and Barradas, {N. P.} and V. Darakchieva and E. Alves and S. Pereira and Correia, {M. R.} and F. Munnik and Martin, {R. W.} and O'Donnell, {K. P.} and Watson, {I. M.}",
year = "2010",
month = "7",
doi = "10.1002/pssb.200983656",
language = "English",
volume = "247",
pages = "1740--1746",
journal = "Physica Status Solidi B",
issn = "0370-1972",
number = "7",

}

Lorenz, K, Magalhaes, S, Franco, N, Barradas, NP, Darakchieva, V, Alves, E, Pereira, S, Correia, MR, Munnik, F, Martin, RW, O'Donnell, KP & Watson, IM 2010, 'Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties', Physica Status Solidi B, vol. 247, no. 7, pp. 1740-1746. https://doi.org/10.1002/pssb.200983656

Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties. / Lorenz, K.; Magalhaes, S.; Franco, N.; Barradas, N. P.; Darakchieva, V.; Alves, E.; Pereira, S.; Correia, M. R.; Munnik, F.; Martin, R. W.; O'Donnell, K. P.; Watson, I. M.

In: Physica Status Solidi B, Vol. 247, No. 7, 07.2010, p. 1740-1746.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties

AU - Lorenz, K.

AU - Magalhaes, S.

AU - Franco, N.

AU - Barradas, N. P.

AU - Darakchieva, V.

AU - Alves, E.

AU - Pereira, S.

AU - Correia, M. R.

AU - Munnik, F.

AU - Martin, R. W.

AU - O'Donnell, K. P.

AU - Watson, I. M.

PY - 2010/7

Y1 - 2010/7

N2 - High quality Al1-xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x = 0.13 to 0.24. Up to x = 0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smooth surface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, the mechanisms leading to relaxation of compressive strain are very different in the two samples grown both at similar temperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneously distributed with depth. The other sample started to grow with x = 0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x similar to 0.17. Both samples have an increased surface roughness. All samples show strong Al1-xInxN band edge luminescence with large bowing parameter and Stokes' shifts. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

AB - High quality Al1-xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x = 0.13 to 0.24. Up to x = 0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smooth surface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, the mechanisms leading to relaxation of compressive strain are very different in the two samples grown both at similar temperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneously distributed with depth. The other sample started to grow with x = 0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x similar to 0.17. Both samples have an increased surface roughness. All samples show strong Al1-xInxN band edge luminescence with large bowing parameter and Stokes' shifts. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

KW - photoluminescence

KW - Rutherford backscattering spectrometry

KW - surface structure

KW - III-V semiconductors

KW - field-effect transistor

KW - alinn

KW - alloys

KW - growth

KW - layers

KW - movpe

KW - GaN

KW - optics

UR - http://www.scopus.com/inward/record.url?scp=77954567521&partnerID=8YFLogxK

U2 - 10.1002/pssb.200983656

DO - 10.1002/pssb.200983656

M3 - Article

VL - 247

SP - 1740

EP - 1746

JO - Physica Status Solidi B

JF - Physica Status Solidi B

SN - 0370-1972

IS - 7

ER -

Lorenz K, Magalhaes S, Franco N, Barradas NP, Darakchieva V, Alves E et al. Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties. Physica Status Solidi B. 2010 Jul;247(7):1740-1746. https://doi.org/10.1002/pssb.200983656