Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2

Pengfei Tian, Ahmad Althumali, Erdan Gu, Ian M. Watson, Martin D. Dawson, Ran Liu

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Abstract

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm−2 for emerging microLED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.
Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalSemiconductor Science and Technology
Volume31
Issue number4
DOIs
Publication statusPublished - 2 Mar 2016

Keywords

  • micro-light emitting diodes
  • aging
  • InGaN
  • high current density
  • defect

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    Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2

    Gu, E. (Creator), Tian, P. (Creator), Watson, I. (Contributor), Dawson, M. (Contributor) & Liu, R. (Contributor), University of Strathclyde, Mar 2016

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