Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2

Pengfei Tian, Ahmad Althumali, Erdan Gu, Ian M. Watson, Martin D. Dawson, Ran Liu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm−2 for emerging microLED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.
LanguageEnglish
Pages1-12
Number of pages12
JournalSemiconductor Science and Technology
Volume31
Issue number4
DOIs
Publication statusPublished - 2 Mar 2016

Fingerprint

Light emitting diodes
high current
Current density
light emitting diodes
Aging of materials
current density
degradation
Degradation
output
optical communication
Organic lasers
organic lasers
Temperature
illuminating
temperature
emerging
Lighting
Chemical activation
activation
solid state

Keywords

  • micro-light emitting diodes
  • aging
  • InGaN
  • high current density
  • defect

Cite this

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title = "Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2",
abstract = "The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm−2 for emerging microLED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.",
keywords = "micro-light emitting diodes, aging, InGaN, high current density, defect",
author = "Pengfei Tian and Ahmad Althumali and Erdan Gu and Watson, {Ian M.} and Dawson, {Martin D.} and Ran Liu",
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Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2. / Tian, Pengfei; Althumali, Ahmad; Gu, Erdan; Watson, Ian M.; Dawson, Martin D.; Liu, Ran.

In: Semiconductor Science and Technology, Vol. 31, No. 4, 02.03.2016, p. 1-12.

Research output: Contribution to journalArticle

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T1 - Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2

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AU - Althumali, Ahmad

AU - Gu, Erdan

AU - Watson, Ian M.

AU - Dawson, Martin D.

AU - Liu, Ran

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