Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

C. Trager-Cowan^*, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, B. M. Jablon, R. Johnston, R. W. Martin, R. McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, E. Pascal, D. Thomson, S. Vespucci, K. Mingard, P. J. Parbrook, M. D. SmithJ. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, A. Knauer, S. Hagedorn, S. Walde, M. Weyers, P-M Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, A. Winkelmann

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

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Quantitative non-destructive nanoscale characterisation of advanced materials
Hourahine, B. (Principal Investigator), Edwards, P. (Co-investigator), Roper, M. (Co-investigator), Trager-Cowan, C. (Co-investigator) & Gunasekar, N. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/06/17 → 30/11/21
Project: Research
Manufacturing of nano-engineered III-nitride semiconductors
Martin, R. (Principal Investigator) & Trager-Cowan, C. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/05/15 → 30/09/21
Project: Research

Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

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Quantitative non-destructive nanoscale characterisation of advanced materials

Manufacturing of nano-engineered III-nitride semiconductors