Adsorption and decomposition of ethylene (C2H4) on GaAs(100)

Y Chen, J C Barnard, L Siller, J Schmidt, R E Palmer, Yu Chen

Research output: Contribution to journalArticle

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Abstract

An understanding of the interaction of organic molecules with semiconductors is important for both fundamental research and technological applications. With such knowledge, it may be possible to bond a wide range of useful organic molecules directly to the semiconductor surface. The adsorption of ethylene, C2H4, on the arsenic-terminated GaAs(100) surface has been studied using high-resolution electron energy-loss spectroscopy (HREELS). We find that ethylene molecules are chemisorbed on the surface in a near-sp(3) hybridisation state at 300 K. Conversion from the physisorption state at 100 K to the chemisorption state is observed when the sample temperature is raised to room temperature. The sticking coefficient for ethylene on the surface at 300 K is about two orders of magnitude lower than that at 100 K. The electron-stimulated desorption (ESD) with low-energy electrons (0-50 eV) of the physisorbed species leads to quite different behaviour than heating; specifically, the desorption of H+ and CH3+ ions is due to C-H and C=C bond scission. respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

LanguageEnglish
Pages192-198
Number of pages7
JournalSurface Science
Volume441
Issue number1
DOIs
Publication statusPublished - 20 Oct 1999

Fingerprint

Ethylene
ethylene
Decomposition
decomposition
Adsorption
adsorption
Molecules
Desorption
desorption
electron energy
Semiconductor materials
molecules
Physisorption
Electrons
Electron energy loss spectroscopy
Arsenic
Beam plasma interactions
Chemisorption
arsenic
chemisorption

Keywords

  • adsorption
  • electron energy loss spectroscopy
  • electron stimulated desorption (ESD)
  • hydrocarbons
  • III-V semiconductors
  • surface molecules

Cite this

Chen, Y., Barnard, J. C., Siller, L., Schmidt, J., Palmer, R. E., & Chen, Y. (1999). Adsorption and decomposition of ethylene (C2H4) on GaAs(100). Surface Science, 441(1), 192-198. https://doi.org/10.1016/S0039-6028(99)00859-6
Chen, Y ; Barnard, J C ; Siller, L ; Schmidt, J ; Palmer, R E ; Chen, Yu. / Adsorption and decomposition of ethylene (C2H4) on GaAs(100). In: Surface Science. 1999 ; Vol. 441, No. 1. pp. 192-198.
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Chen, Y, Barnard, JC, Siller, L, Schmidt, J, Palmer, RE & Chen, Y 1999, 'Adsorption and decomposition of ethylene (C2H4) on GaAs(100)' Surface Science, vol. 441, no. 1, pp. 192-198. https://doi.org/10.1016/S0039-6028(99)00859-6

Adsorption and decomposition of ethylene (C2H4) on GaAs(100). / Chen, Y ; Barnard, J C ; Siller, L ; Schmidt, J ; Palmer, R E ; Chen, Yu.

In: Surface Science, Vol. 441, No. 1, 20.10.1999, p. 192-198.

Research output: Contribution to journalArticle

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T1 - Adsorption and decomposition of ethylene (C2H4) on GaAs(100)

AU - Chen, Y

AU - Barnard, J C

AU - Siller, L

AU - Schmidt, J

AU - Palmer, R E

AU - Chen, Yu

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N2 - An understanding of the interaction of organic molecules with semiconductors is important for both fundamental research and technological applications. With such knowledge, it may be possible to bond a wide range of useful organic molecules directly to the semiconductor surface. The adsorption of ethylene, C2H4, on the arsenic-terminated GaAs(100) surface has been studied using high-resolution electron energy-loss spectroscopy (HREELS). We find that ethylene molecules are chemisorbed on the surface in a near-sp(3) hybridisation state at 300 K. Conversion from the physisorption state at 100 K to the chemisorption state is observed when the sample temperature is raised to room temperature. The sticking coefficient for ethylene on the surface at 300 K is about two orders of magnitude lower than that at 100 K. The electron-stimulated desorption (ESD) with low-energy electrons (0-50 eV) of the physisorbed species leads to quite different behaviour than heating; specifically, the desorption of H+ and CH3+ ions is due to C-H and C=C bond scission. respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

AB - An understanding of the interaction of organic molecules with semiconductors is important for both fundamental research and technological applications. With such knowledge, it may be possible to bond a wide range of useful organic molecules directly to the semiconductor surface. The adsorption of ethylene, C2H4, on the arsenic-terminated GaAs(100) surface has been studied using high-resolution electron energy-loss spectroscopy (HREELS). We find that ethylene molecules are chemisorbed on the surface in a near-sp(3) hybridisation state at 300 K. Conversion from the physisorption state at 100 K to the chemisorption state is observed when the sample temperature is raised to room temperature. The sticking coefficient for ethylene on the surface at 300 K is about two orders of magnitude lower than that at 100 K. The electron-stimulated desorption (ESD) with low-energy electrons (0-50 eV) of the physisorbed species leads to quite different behaviour than heating; specifically, the desorption of H+ and CH3+ ions is due to C-H and C=C bond scission. respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

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KW - surface molecules

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