Active snubber energy recovery circuit for series-connected IGBTs

T. C. Lim, B. W. Williams, S. J. Finney

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

This paper presents a novel active snubber recovery circuit for series-connected insulated gate bipolar transistors (IGBTs). The proposed technique allows turnon and turnoff switching of the series IGBTs to be controlled and balanced through conventional snubber effects, but the configuration includes active circuitry to recover into the dc supply, the stored snubber energy. Detailed waveform analysis and associated mathematical equations are presented, supported by PSpice simulations. The proposed technique is practically demonstrated, at a scaled power level, on a single IGBT to illustrate the control concept and on three series-connected IGBTs to demonstrate dynamic voltage sharing.
Original languageEnglish
Pages (from-to)1879-1889
Number of pages11
JournalIEEE Transactions on Power Electronics
Volume26
Issue number7
DOIs
Publication statusPublished - Jul 2011

Keywords

  • active snubber circuit
  • series connection
  • insulated gate bipolar transistor (IGBT)
  • energy recovery
  • series-connected IGBTs
  • insulated gate bipolar transistor
  • series connection

Fingerprint Dive into the research topics of 'Active snubber energy recovery circuit for series-connected IGBTs'. Together they form a unique fingerprint.

Cite this