Active snubber energy recovery circuit for series-connected IGBTs

T. C. Lim, B. W. Williams, S. J. Finney

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This paper presents a novel active snubber recovery circuit for series-connected insulated gate bipolar transistors (IGBTs). The proposed technique allows turnon and turnoff switching of the series IGBTs to be controlled and balanced through conventional snubber effects, but the configuration includes active circuitry to recover into the dc supply, the stored snubber energy. Detailed waveform analysis and associated mathematical equations are presented, supported by PSpice simulations. The proposed technique is practically demonstrated, at a scaled power level, on a single IGBT to illustrate the control concept and on three series-connected IGBTs to demonstrate dynamic voltage sharing.
Original languageEnglish
Pages (from-to)1879-1889
Number of pages11
JournalIEEE Transactions on Power Electronics
Volume26
Issue number7
DOIs
Publication statusPublished - Jul 2011

Fingerprint

Insulated gate bipolar transistors (IGBT)
Recovery
Networks (circuits)
Waveform analysis
Electric potential

Keywords

  • active snubber circuit
  • series connection
  • insulated gate bipolar transistor (IGBT)
  • energy recovery
  • series-connected IGBTs
  • insulated gate bipolar transistor
  • series connection

Cite this

Lim, T. C. ; Williams, B. W. ; Finney, S. J. / Active snubber energy recovery circuit for series-connected IGBTs. In: IEEE Transactions on Power Electronics. 2011 ; Vol. 26, No. 7. pp. 1879-1889.
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Active snubber energy recovery circuit for series-connected IGBTs. / Lim, T. C.; Williams, B. W.; Finney, S. J.

In: IEEE Transactions on Power Electronics, Vol. 26, No. 7, 07.2011, p. 1879-1889.

Research output: Contribution to journalArticle

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