Active matrix thin-film transistor array backplane: patent application

C. Forbes (Inventor), A. Gelbman (Inventor), H. Gleskova (Inventor), C. Turner (Inventor), S. Wagner (Inventor)

Research output: Patent

Abstract

A thin film transistor array fabricated on a polyimide substrate forms a backplane for an electronic display. The thin film transistor array incorporate gate electrodes, a gate insulating layer (44), semiconducting channel layers (50) deposited on top of the gate insulating layer (44), a source electrode (60), a drain electrode (60) and a contact layer (52) beneath each of the source and drain electrodes (60) and in contact with at least the channel layer (50). An insulating encapsulation layer (70) is positioned on the channel layer (50). The layers are deposited onto the polyimide substrate (32) using PECVD and etched using photolithography to form the backplane.
Original languageEnglish
Patent numberWO03046964 A1
IPC7C 09K 19/02 B
Publication statusPublished - 5 Jun 2003

Keywords

  • thin film
  • polymide substrate
  • backplane
  • gate electrodes

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