Active-matrix thin-film transistor array backplane

C. Forbes (Inventor), A. Gelbman (Inventor), Helena Gleskova (Inventor), C. Turner (Inventor), S. Wagner (Inventor)

Research output: Patent

Abstract

A thin film transistor array fabricated on a polyimide substrate forms a backplane for an electronic display. The thin film transistor array incorporates gate electrodes, a gate insulating layer, semiconducting channel layers deposited on top of the gate insulating layer, a source electrode, a drain electrode and a contact layer beneath each of the source and drain electrodes and in contact with at least the channel layer. An insulating encapsulation layer is positioned on the channel layer. The layers are deposited onto the polyimide substrate using PECVD and etched using photolithography to form the backplane.
LanguageEnglish
Patent numberUS20040110326 A1
IPCH01L021/00
Publication statusPublished - 10 Jun 2004

Fingerprint

transistors
matrices
thin films
electrodes
polyimides
photolithography
electronics

Keywords

  • thin film
  • substrate conductivity
  • gate electrodes
  • polymide substrate

Cite this

Forbes, C., Gelbman, A., Gleskova, H., Turner, C., & Wagner, S. (2004). IPC No. H01L021/00. Active-matrix thin-film transistor array backplane. (Patent No. US20040110326 A1).
Forbes, C. (Inventor) ; Gelbman, A. (Inventor) ; Gleskova, Helena (Inventor) ; Turner, C. (Inventor) ; Wagner, S. (Inventor). / Active-matrix thin-film transistor array backplane. IPC No.: H01L021/00. Patent No.: US20040110326 A1.
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Forbes, C, Gelbman, A, Gleskova, H, Turner, C & Wagner, S 2004, Active-matrix thin-film transistor array backplane, Patent No. US20040110326 A1, IPC No. H01L021/00.

Active-matrix thin-film transistor array backplane. / Forbes, C. (Inventor); Gelbman, A. (Inventor); Gleskova, Helena (Inventor); Turner, C. (Inventor); Wagner, S. (Inventor).

IPC No.: H01L021/00. Patent No.: US20040110326 A1.

Research output: Patent

TY - PAT

T1 - Active-matrix thin-film transistor array backplane

AU - Forbes, C.

AU - Gelbman, A.

AU - Gleskova, Helena

AU - Turner, C.

AU - Wagner, S.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - A thin film transistor array fabricated on a polyimide substrate forms a backplane for an electronic display. The thin film transistor array incorporates gate electrodes, a gate insulating layer, semiconducting channel layers deposited on top of the gate insulating layer, a source electrode, a drain electrode and a contact layer beneath each of the source and drain electrodes and in contact with at least the channel layer. An insulating encapsulation layer is positioned on the channel layer. The layers are deposited onto the polyimide substrate using PECVD and etched using photolithography to form the backplane.

AB - A thin film transistor array fabricated on a polyimide substrate forms a backplane for an electronic display. The thin film transistor array incorporates gate electrodes, a gate insulating layer, semiconducting channel layers deposited on top of the gate insulating layer, a source electrode, a drain electrode and a contact layer beneath each of the source and drain electrodes and in contact with at least the channel layer. An insulating encapsulation layer is positioned on the channel layer. The layers are deposited onto the polyimide substrate using PECVD and etched using photolithography to form the backplane.

KW - thin film

KW - substrate conductivity

KW - gate electrodes

KW - polymide substrate

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Forbes C, Gelbman A, Gleskova H, Turner C, Wagner S, inventors. Active-matrix thin-film transistor array backplane. H01L021/00. 2004 Jun 10.