Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf, Jonathan J. D. McKendry, Shuailong Zhang, Enyuan Xie, Ricardo Ferreira, David Massoubre, Ahmad Mahmood Zuhdi, Robert K. Henderson, Ian Underwood, Scott Watson, Anthony E. Kelly, Erdan Gu, Martin D. Dawson

Research output: Contribution to journalArticle

72 Citations (Scopus)
865 Downloads (Pure)

Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².
Original languageEnglish
Pages (from-to)1918-1925
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume62
Issue number6
Early online date10 Apr 2015
DOIs
Publication statusPublished - 1 Jun 2015

Keywords

  • CMOS integrated circuits
  • displays
  • flip-chip devices
  • integrated optoelectronics
  • light-emitting diodes (LEDs).

Fingerprint Dive into the research topics of 'Active-matrix GaN micro light-emitting diode display with unprecedented brightness'. Together they form a unique fingerprint.

Cite this