Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf, Jonathan J. D. McKendry, Shuailong Zhang, Enyuan Xie, Ricardo Ferreira, David Massoubre, Ahmad Mahmood Zuhdi, Robert K. Henderson, Ian Underwood, Scott Watson, Anthony E. Kelly, Erdan Gu, Martin D. Dawson

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².
LanguageEnglish
Pages1918-1925
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume62
Issue number6
Early online date10 Apr 2015
DOIs
Publication statusPublished - 1 Jun 2015

Fingerprint

Light emitting diodes
Luminance
Display devices
Gallium nitride
gallium nitride

Keywords

  • CMOS integrated circuits
  • displays
  • flip-chip devices
  • integrated optoelectronics
  • light-emitting diodes (LEDs).

Cite this

Herrnsdorf, Johannes ; McKendry, Jonathan J. D. ; Zhang, Shuailong ; Xie, Enyuan ; Ferreira, Ricardo ; Massoubre, David ; Zuhdi, Ahmad Mahmood ; Henderson, Robert K. ; Underwood, Ian ; Watson, Scott ; Kelly, Anthony E. ; Gu, Erdan ; Dawson, Martin D. / Active-matrix GaN micro light-emitting diode display with unprecedented brightness. In: IEEE Transactions on Electron Devices. 2015 ; Vol. 62, No. 6. pp. 1918-1925.
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Active-matrix GaN micro light-emitting diode display with unprecedented brightness. / Herrnsdorf, Johannes; McKendry, Jonathan J. D.; Zhang, Shuailong; Xie, Enyuan; Ferreira, Ricardo; Massoubre, David; Zuhdi, Ahmad Mahmood; Henderson, Robert K.; Underwood, Ian; Watson, Scott; Kelly, Anthony E.; Gu, Erdan; Dawson, Martin D.

In: IEEE Transactions on Electron Devices, Vol. 62, No. 6, 01.06.2015, p. 1918-1925.

Research output: Contribution to journalArticle

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