Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf, Jonathan J. D. McKendry, Shuailong Zhang, Enyuan Xie, Ricardo Ferreira, David Massoubre, Ahmad Mahmood Zuhdi, Robert K. Henderson, Ian Underwood, Scott Watson, Anthony E. Kelly, Erdan Gu, Martin D. Dawson

Research output: Contribution to journalArticlepeer-review

98 Citations (Scopus)
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Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².
Original languageEnglish
Pages (from-to)1918-1925
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number6
Early online date10 Apr 2015
Publication statusPublished - 1 Jun 2015


  • CMOS integrated circuits
  • displays
  • flip-chip devices
  • integrated optoelectronics
  • light-emitting diodes (LEDs).


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