Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf; Jonathan J. D. McKendry; Shuailong Zhang; Enyuan Xie; Ricardo Ferreira; David Massoubre; Ahmad Mahmood Zuhdi; Robert K. Henderson; Ian Underwood; Scott Watson; Anthony E. Kelly; Erdan Gu; Martin D. Dawson

doi:10.1109/TED.2015.2416915

Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Johannes Herrnsdorf, Jonathan J. D. McKendry, Shuailong Zhang, Enyuan Xie, Ricardo Ferreira, David Massoubre, Ahmad Mahmood Zuhdi, Robert K. Henderson, Ian Underwood, Scott Watson, Anthony E. Kelly, Erdan Gu, Martin D. Dawson

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Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

Original language	English
Pages (from-to)	1918-1925
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	6
Early online date	10 Apr 2015
DOIs	https://doi.org/10.1109/TED.2015.2416915
Publication status	Published - 1 Jun 2015

Keywords

CMOS integrated circuits
displays
flip-chip devices
integrated optoelectronics
light-emitting diodes (LEDs).

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10.1109/TED.2015.2416915Licence: CC BY 4.0

Herrnsdorf-etal-TED2015-Active-matrix-GaN-micro-light-emitting-diodeFinal published version, 1.53 MBLicence: CC BY 4.0

Cite this

Herrnsdorf, J., McKendry, J. J. D., Zhang, S., Xie, E., Ferreira, R., Massoubre, D., Zuhdi, A. M., Henderson, R. K., Underwood, I., Watson, S., Kelly, A. E., Gu, E., & Dawson, M. D. (2015). Active-matrix GaN micro light-emitting diode display with unprecedented brightness. IEEE Transactions on Electron Devices, 62(6), 1918-1925. https://doi.org/10.1109/TED.2015.2416915

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title = "Active-matrix GaN micro light-emitting diode display with unprecedented brightness",

abstract = "Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².",

keywords = "CMOS integrated circuits, displays, flip-chip devices, integrated optoelectronics, light-emitting diodes (LEDs).",

author = "Johannes Herrnsdorf and McKendry, {Jonathan J. D.} and Shuailong Zhang and Enyuan Xie and Ricardo Ferreira and David Massoubre and Zuhdi, {Ahmad Mahmood} and Henderson, {Robert K.} and Ian Underwood and Scott Watson and Kelly, {Anthony E.} and Erdan Gu and Dawson, {Martin D.}",

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month = jun,

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doi = "10.1109/TED.2015.2416915",

language = "English",

volume = "62",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Active-matrix GaN micro light-emitting diode display with unprecedented brightness

AU - Herrnsdorf, Johannes

AU - McKendry, Jonathan J. D.

AU - Zhang, Shuailong

AU - Xie, Enyuan

AU - Ferreira, Ricardo

AU - Massoubre, David

AU - Zuhdi, Ahmad Mahmood

AU - Henderson, Robert K.

AU - Underwood, Ian

AU - Watson, Scott

AU - Kelly, Anthony E.

AU - Gu, Erdan

AU - Dawson, Martin D.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

AB - Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

KW - CMOS integrated circuits

KW - displays

KW - flip-chip devices

KW - integrated optoelectronics

KW - light-emitting diodes (LEDs).

UR - http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16

U2 - 10.1109/TED.2015.2416915

DO - 10.1109/TED.2015.2416915

M3 - Article

SN - 0018-9383

VL - 62

SP - 1918

EP - 1925

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Abstract

Keywords

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Johannes Herrnsdorf

Hybrid organic semiconductor / gallium nitride / CMOS smart pixels arrays

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Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Abstract

Keywords

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Profiles

Johannes Herrnsdorf

Projects

Hybrid organic semiconductor / gallium nitride / CMOS smart pixels arrays

Cite this