Active-matrix amorphous-silicon TFT arrays at 180ºC on clear plastic and glass substrates for organic light-emitting displays

K. Long, A. Z. Kattamis, I. C. Cheng, H. Gleskova, Sigurd Wagner, J. C. Sturm, M. Stevenson, G. Yu, M. O'Regan

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

An amorphous-silicon thin-film transistor (TFT) process with a 180 °C maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300 °C-350 °C. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500 cd/m 2.

Original languageEnglish
Pages (from-to)1789-1796
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume53
Issue number8
DOIs
Publication statusPublished - Aug 2006

Keywords

  • active matrix
  • amorphous-silicon
  • flexible
  • organic light-emitting display
  • plastic substrate
  • thin-film transitor (TFT)

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