Projects per year
Abstract
With a view to supporting the development of ultra-violet light-emitting diodes and related devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga1-x N alloys are extensively compared. This study has been designed to determine how the different Al x Ga1-x N crystal orientations (polar (0001) and semipolar (11-22)) affect group-III composition and Si incorporation. Wavelength dispersive x-ray (WDX) spectroscopy was used to determine the AlN mole fraction (x ≈ 0.57-0.85) and dopant concentration (3 1018-1 1019 cm-3) in various series of Al x Ga1-x N layers grown on (0001) and (11-22) AlN/sapphire templates by metalorganic chemical vapor deposition. The polar samples exhibit hexagonal surface features with Ga-rich boundaries confirmed by WDX mapping. Surface morphology was examined by atomic force microscopy for samples grown with different disilane flow rates and the semipolar samples were shown to have smoother surfaces than their polar counterparts, with an approximate 15% reduction in roughness. Optical characterization using cathodoluminescence (CL) spectroscopy allowed analysis of near-band edge emission in the range 4.0-5.4 eV as well as various deep impurity transition peaks in the range 2.7-4.8 eV. The combination of spatially-resolved characterization techniques, including CL and WDX, has provided detailed information on how the crystal growth direction affects the alloy and dopant concentrations.
Original language | English |
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Article number | 035302 |
Number of pages | 12 |
Journal | Journal of Physics D: Applied Physics |
Volume | 54 |
Issue number | 3 |
Early online date | 22 Oct 2020 |
DOIs | |
Publication status | Published - 31 Jan 2021 |
Keywords
- AlGaN
- crystal orientation
- alloy composition
- III-nitride semiconductors
- Si doping
- cathodoluminescence
- X-ray microanalysis
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Dive into the research topics of 'A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content'. Together they form a unique fingerprint.Projects
- 3 Finished
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Nanoanalysis for Advanced Materials and Healthcare - EPSRC strategic equipment
Martin, R. (Principal Investigator), Edwards, P. (Co-investigator), Faulds, K. (Co-investigator), Florence, A. (Co-investigator), Graham, D. (Co-investigator), Sefcik, J. (Co-investigator), Ter Horst, J. (Co-investigator), Trager-Cowan, C. (Co-investigator), Uttamchandani, D. (Co-investigator) & Wark, A. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
8/11/15 → 7/11/19
Project: Research
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Manufacturing of nano-engineered III-nitride semiconductors
Martin, R. (Principal Investigator) & Trager-Cowan, C. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/05/15 → 30/09/21
Project: Research
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University Of Strathclyde - Equipment Account
Gachagan, A. (Principal Investigator), He, W. (Principal Investigator), Jaroszynski, D. (Principal Investigator), Martin, R. (Principal Investigator), McArthur, S. (Principal Investigator), McArthur, S. (Principal Investigator), Connolly, P. (Co-investigator), Edwards, P. (Co-investigator), Faulds, K. (Co-investigator), Florence, A. (Co-investigator), Graham, D. (Co-investigator), Leithead, B. (Co-investigator), Sefcik, J. (Co-investigator), Ter Horst, J. (Co-investigator), Trager-Cowan, C. (Co-investigator), Uttamchandani, D. (Co-investigator) & Wark, A. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/08/13 → 28/02/23
Project: Research
Datasets
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Data for: "A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content"
Spasevski, L. (Creator), Martin, R. (Creator), Bruckbauer, J. (Creator) & Edwards, P. (Creator), University of Strathclyde, 15 Oct 2020
DOI: 10.15129/d7c54205-9bca-4785-9b3e-1e6a2b182771
Dataset