A statistical topographic model for exciton luminescence spectra

M. Wilkinson, Fang Yang, E. J. Austin, K. P. O'Donnell

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Some features of the absorption and luminescence spectra of excitons in disordered 2D semiconductors appear to be nearly universal over a wide range of samples. In particular, the offset of the peaks of these two spectra is proportional to their linewidths, over a range of two orders of magnitude. The authors show that the relationship between these spectra can be understood in terms of the statistical properties of a Gaussian random function: the absorption spectrum is proportional to the probability distribution of the function itself, whereas the luminescence spectrum is proportional to the distribution of the heights of the minima of the function.

LanguageEnglish
Article number019
Pages8863-8878
Number of pages16
JournalJournal of Physics: Condensed Matter
Volume4
Issue number45
DOIs
Publication statusPublished - 1 Dec 1992

Fingerprint

Excitons
Luminescence
excitons
luminescence
absorption spectra
Linewidth
Probability distributions
Absorption spectra
Semiconductor materials
Statistical Models
LDS 751

Keywords

  • exciton luminescence
  • adsorption spectrum
  • quantum wells

Cite this

Wilkinson, M. ; Yang, Fang ; Austin, E. J. ; O'Donnell, K. P. / A statistical topographic model for exciton luminescence spectra. In: Journal of Physics: Condensed Matter . 1992 ; Vol. 4, No. 45. pp. 8863-8878.
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A statistical topographic model for exciton luminescence spectra. / Wilkinson, M.; Yang, Fang; Austin, E. J.; O'Donnell, K. P.

In: Journal of Physics: Condensed Matter , Vol. 4, No. 45, 019, 01.12.1992, p. 8863-8878.

Research output: Contribution to journalArticle

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