A silicon single-electron pump with tunable electrostatic confinement

A. Rossi; T. Tanttu; K. Y. Tan; R. Zhao; K. W. Chan; I. Iisakka; G. C. Tettamanzi; S. Rogge; A. S. Dzurak; M. Mottonen

doi:10.1109/SNW.2014.7348563

A silicon single-electron pump with tunable electrostatic confinement

A. Rossi, T. Tanttu, K. Y. Tan, R. Zhao, K. W. Chan, I. Iisakka, G. C. Tettamanzi, S. Rogge, A. S. Dzurak, M. Mottonen

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Place of Publication	Piscataway, N.J.
Number of pages	2
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348563
Publication status	Published - 4 Dec 2015
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 8 Jun 2014 → 9 Jun 2014

Conference

Conference	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	8/06/14 → 9/06/14

Funding

We acknowledge support from the Australian Research Council, the Academy of Finland, the Australian Nanotechnology Network, and the Australian National Fabrication Facility.

Keywords

logic gates
silicon
quantum dots

Access to Document

10.1109/SNW.2014.7348563

Cite this

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title = "A silicon single-electron pump with tunable electrostatic confinement",

abstract = "Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).",

keywords = "logic gates, silicon, quantum dots",

author = "A. Rossi and T. Tanttu and Tan, \{K. Y.\} and R. Zhao and Chan, \{K. W.\} and I. Iisakka and Tettamanzi, \{G. C.\} and S. Rogge and Dzurak, \{A. S.\} and M. Mottonen",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348563",

language = "English",

booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

note = "Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

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Rossi, A, Tanttu, T, Tan, KY, Zhao, R, Chan, KW, Iisakka, I, Tettamanzi, GC, Rogge, S, Dzurak, AS & Mottonen, M 2015, A silicon single-electron pump with tunable electrostatic confinement. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348563, Piscataway, N.J., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 8/06/14. https://doi.org/10.1109/SNW.2014.7348563

TY - GEN

T1 - A silicon single-electron pump with tunable electrostatic confinement

AU - Rossi, A.

AU - Tanttu, T.

AU - Tan, K. Y.

AU - Zhao, R.

AU - Chan, K. W.

AU - Iisakka, I.

AU - Tettamanzi, G. C.

AU - Rogge, S.

AU - Dzurak, A. S.

AU - Mottonen, M.

PY - 2015/12/4

Y1 - 2015/12/4

N2 - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

AB - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

KW - logic gates

KW - silicon

KW - quantum dots

UR - https://www.scopus.com/pages/publications/84963877868

U2 - 10.1109/SNW.2014.7348563

DO - 10.1109/SNW.2014.7348563

M3 - Conference contribution book

AN - SCOPUS:84963877868

BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

CY - Piscataway, N.J.

T2 - Silicon Nanoelectronics Workshop, SNW 2014

Y2 - 8 June 2014 through 9 June 2014

ER -

A silicon single-electron pump with tunable electrostatic confinement

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