A silicon single-electron pump with tunable electrostatic confinement

A. Rossi, T. Tanttu, K. Y. Tan, R. Zhao, K. W. Chan, I. Iisakka, G. C. Tettamanzi, S. Rogge, A. S. Dzurak, M. Mottonen

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
Place of PublicationPiscataway, N.J.
Number of pages2
ISBN (Electronic)9781479956777
DOIs
Publication statusPublished - 4 Dec 2015
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2014
CountryUnited States
CityHonolulu
Period8/06/149/06/14

Keywords

  • logic gates
  • silicon
  • quantum dots

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    Rossi, A., Tanttu, T., Tan, K. Y., Zhao, R., Chan, K. W., Iisakka, I., ... Mottonen, M. (2015). A silicon single-electron pump with tunable electrostatic confinement. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348563] Piscataway, N.J.. https://doi.org/10.1109/SNW.2014.7348563