A silicon single-electron pump with tunable electrostatic confinement

A. Rossi, T. Tanttu, K. Y. Tan, R. Zhao, K. W. Chan, I. Iisakka, G. C. Tettamanzi, S. Rogge, A. S. Dzurak, M. Mottonen

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781479956777
DOIs
Publication statusPublished - 4 Dec 2015
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2014
CountryUnited States
CityHonolulu
Period8/06/149/06/14

Fingerprint

Silicon
Electrostatics
Pumps
Electrons
Semiconductor quantum dots
Tunnels
Electrodes
Uncertainty

Keywords

  • logic gates
  • silicon
  • quantum dots

Cite this

Rossi, A., Tanttu, T., Tan, K. Y., Zhao, R., Chan, K. W., Iisakka, I., ... Mottonen, M. (2015). A silicon single-electron pump with tunable electrostatic confinement. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348563] Piscataway, N.J.: Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348563
Rossi, A. ; Tanttu, T. ; Tan, K. Y. ; Zhao, R. ; Chan, K. W. ; Iisakka, I. ; Tettamanzi, G. C. ; Rogge, S. ; Dzurak, A. S. ; Mottonen, M. / A silicon single-electron pump with tunable electrostatic confinement. 2014 Silicon Nanoelectronics Workshop, SNW 2014. Piscataway, N.J. : Institute of Electrical and Electronics Engineers Inc., 2015.
@inproceedings{cbeb1b0726124860af8a6a253ca9c638,
title = "A silicon single-electron pump with tunable electrostatic confinement",
abstract = "Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).",
keywords = "logic gates, silicon, quantum dots",
author = "A. Rossi and T. Tanttu and Tan, {K. Y.} and R. Zhao and Chan, {K. W.} and I. Iisakka and Tettamanzi, {G. C.} and S. Rogge and Dzurak, {A. S.} and M. Mottonen",
year = "2015",
month = "12",
day = "4",
doi = "10.1109/SNW.2014.7348563",
language = "English",
booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Rossi, A, Tanttu, T, Tan, KY, Zhao, R, Chan, KW, Iisakka, I, Tettamanzi, GC, Rogge, S, Dzurak, AS & Mottonen, M 2015, A silicon single-electron pump with tunable electrostatic confinement. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348563, Institute of Electrical and Electronics Engineers Inc., Piscataway, N.J., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 8/06/14. https://doi.org/10.1109/SNW.2014.7348563

A silicon single-electron pump with tunable electrostatic confinement. / Rossi, A.; Tanttu, T.; Tan, K. Y.; Zhao, R.; Chan, K. W.; Iisakka, I.; Tettamanzi, G. C.; Rogge, S.; Dzurak, A. S.; Mottonen, M.

2014 Silicon Nanoelectronics Workshop, SNW 2014. Piscataway, N.J. : Institute of Electrical and Electronics Engineers Inc., 2015. 7348563.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - A silicon single-electron pump with tunable electrostatic confinement

AU - Rossi, A.

AU - Tanttu, T.

AU - Tan, K. Y.

AU - Zhao, R.

AU - Chan, K. W.

AU - Iisakka, I.

AU - Tettamanzi, G. C.

AU - Rogge, S.

AU - Dzurak, A. S.

AU - Mottonen, M.

PY - 2015/12/4

Y1 - 2015/12/4

N2 - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

AB - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

KW - logic gates

KW - silicon

KW - quantum dots

UR - http://www.scopus.com/inward/record.url?scp=84963877868&partnerID=8YFLogxK

U2 - 10.1109/SNW.2014.7348563

DO - 10.1109/SNW.2014.7348563

M3 - Conference contribution book

BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Piscataway, N.J.

ER -

Rossi A, Tanttu T, Tan KY, Zhao R, Chan KW, Iisakka I et al. A silicon single-electron pump with tunable electrostatic confinement. In 2014 Silicon Nanoelectronics Workshop, SNW 2014. Piscataway, N.J.: Institute of Electrical and Electronics Engineers Inc. 2015. 7348563 https://doi.org/10.1109/SNW.2014.7348563