a-Si:H thin film transistors after very high strain

H. Gleskova, S. Wagner, Z. Suo

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

We fabricate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a 25 μm Kapton foil, and then bend the foil over mandrels of various radii. The bending causes tensile strain in the TFTs when they face out, and compressive strain when they face in. After bending, we measure the electrical properties of the TFTs. After ∼2% of compressive strain, there is no change in the TFT electrical performance due to bending, namely in the on-current, off-current, source-gate leakage current, mobility and the threshold voltage. In tension, no change in the TFT performance is observed up to the strain of ∼0.5%. For larger tensile strains TFTs fail mechanically by cracking of the TFT layers. These cracks run perpendicularly to the bending direction.

Original languageEnglish
Pages (from-to)1320-1324
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 B
DOIs
Publication statusPublished - 2000
Event18th International Conference on Amorphous and Microcrystalline Semiconductors - Snowbird, Utah, United States
Duration: 23 Aug 199927 Aug 1999

Keywords

  • thin film transistors
  • amorphous silicon
  • thin film electronics

Fingerprint Dive into the research topics of 'a-Si:H thin film transistors after very high strain'. Together they form a unique fingerprint.

  • Cite this