a-Si:H thin film transistors after very high strain

H. Gleskova; S. Wagner; Z. Suo

doi:10.1016/S0022-3093(99)00944-8

a-Si:H thin film transistors after very high strain

H. Gleskova^*, S. Wagner, Z. Suo

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

We fabricate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a 25 μm Kapton foil, and then bend the foil over mandrels of various radii. The bending causes tensile strain in the TFTs when they face out, and compressive strain when they face in. After bending, we measure the electrical properties of the TFTs. After ∼2% of compressive strain, there is no change in the TFT electrical performance due to bending, namely in the on-current, off-current, source-gate leakage current, mobility and the threshold voltage. In tension, no change in the TFT performance is observed up to the strain of ∼0.5%. For larger tensile strains TFTs fail mechanically by cracking of the TFT layers. These cracks run perpendicularly to the bending direction.

Original language	English
Pages (from-to)	1320-1324
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 B
DOIs	https://doi.org/10.1016/S0022-3093(99)00944-8
Publication status	Published - 2000
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Snowbird, Utah, United States Duration: 23 Aug 1999 → 27 Aug 1999

Keywords

thin film transistors
amorphous silicon
thin film electronics

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10.1016/S0022-3093(99)00944-8

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title = "a-Si:H thin film transistors after very high strain",

abstract = "We fabricate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a 25 μm Kapton foil, and then bend the foil over mandrels of various radii. The bending causes tensile strain in the TFTs when they face out, and compressive strain when they face in. After bending, we measure the electrical properties of the TFTs. After ∼2% of compressive strain, there is no change in the TFT electrical performance due to bending, namely in the on-current, off-current, source-gate leakage current, mobility and the threshold voltage. In tension, no change in the TFT performance is observed up to the strain of ∼0.5%. For larger tensile strains TFTs fail mechanically by cracking of the TFT layers. These cracks run perpendicularly to the bending direction.",

keywords = "thin film transistors , amorphous silicon , thin film electronics",

author = "H. Gleskova and S. Wagner and Z. Suo",

year = "2000",

doi = "10.1016/S0022-3093(99)00944-8",

language = "English",

volume = "266-269 B",

pages = "1320--1324",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

note = "18th International Conference on Amorphous and Microcrystalline Semiconductors ; Conference date: 23-08-1999 Through 27-08-1999",

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TY - JOUR

T1 - a-Si:H thin film transistors after very high strain

AU - Gleskova, H.

AU - Wagner, S.

AU - Suo, Z.

PY - 2000

Y1 - 2000

N2 - We fabricate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a 25 μm Kapton foil, and then bend the foil over mandrels of various radii. The bending causes tensile strain in the TFTs when they face out, and compressive strain when they face in. After bending, we measure the electrical properties of the TFTs. After ∼2% of compressive strain, there is no change in the TFT electrical performance due to bending, namely in the on-current, off-current, source-gate leakage current, mobility and the threshold voltage. In tension, no change in the TFT performance is observed up to the strain of ∼0.5%. For larger tensile strains TFTs fail mechanically by cracking of the TFT layers. These cracks run perpendicularly to the bending direction.

AB - We fabricate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a 25 μm Kapton foil, and then bend the foil over mandrels of various radii. The bending causes tensile strain in the TFTs when they face out, and compressive strain when they face in. After bending, we measure the electrical properties of the TFTs. After ∼2% of compressive strain, there is no change in the TFT electrical performance due to bending, namely in the on-current, off-current, source-gate leakage current, mobility and the threshold voltage. In tension, no change in the TFT performance is observed up to the strain of ∼0.5%. For larger tensile strains TFTs fail mechanically by cracking of the TFT layers. These cracks run perpendicularly to the bending direction.

KW - thin film transistors

KW - amorphous silicon

KW - thin film electronics

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U2 - 10.1016/S0022-3093(99)00944-8

DO - 10.1016/S0022-3093(99)00944-8

M3 - Article

AN - SCOPUS:0000386312

SN - 0022-3093

VL - 266-269 B

SP - 1320

EP - 1324

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors

Y2 - 23 August 1999 through 27 August 1999

ER -

a-Si:H thin film transistors after very high strain

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Keywords

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