a-Si:H TFTs made on polyimide foil by PE-CVD at 150 °C

H. Gleskova, S. Wagner, Z. Suo

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

We have fabricated high-performance amorphous silicon thin-film transistors (a-Si:H TFTs) on 2 mil. (51 μm) thick polyimide foil substrates. The TFT structure was deposited by r.f.-excited plasma enhanced chemical vapor deposition (PECVD). All TFT layers, including the gate silicon nitride, the undoped, and the n+ amorphous silicon were deposited at a substrate temperature of 150 °C. The transistors have inverted-staggered back-channel etch structure. The TFT off-current is approximately 10-12 A, the on-off current ratio is >107, the threshold voltage is 3.5 V, the sub-threshold slope is approximately 0.5 V/decade, and the linear-regime mobility is approximately 0.5 cm2 V-1 s-1. We compare the mechanical behavior of a thin film on a stiff and on a compliant substrate. The thin film stress can be reduced to one half by changing from a stiff to a compliant substrate. A new equation is developed for the radius of curvature of thin films on compliant substrates.

LanguageEnglish
Pages73-78
Number of pages6
JournalMRS Online Proceedings Library
Volume508
DOIs
Publication statusPublished - 1 Dec 1998

Fingerprint

polyimides
Polyimides
Metal foil
Chemical vapor deposition
foils
vapor deposition
Substrates
thin films
Amorphous silicon
Thin films
amorphous silicon
transistors
Thin film transistors
Plasma enhanced chemical vapor deposition
Silicon nitride
Threshold voltage
silicon nitrides
threshold voltage
Transistors
curvature

Keywords

  • amorphous silicon thin-film transistors
  • a-Si:H TFTs
  • excited plasma enhanced chemical vapor deposition

Cite this

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a-Si:H TFTs made on polyimide foil by PE-CVD at 150 °C. / Gleskova, H.; Wagner, S.; Suo, Z.

In: MRS Online Proceedings Library , Vol. 508, 01.12.1998, p. 73-78.

Research output: Contribution to journalArticle

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AU - Gleskova, H.

AU - Wagner, S.

AU - Suo, Z.

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N2 - We have fabricated high-performance amorphous silicon thin-film transistors (a-Si:H TFTs) on 2 mil. (51 μm) thick polyimide foil substrates. The TFT structure was deposited by r.f.-excited plasma enhanced chemical vapor deposition (PECVD). All TFT layers, including the gate silicon nitride, the undoped, and the n+ amorphous silicon were deposited at a substrate temperature of 150 °C. The transistors have inverted-staggered back-channel etch structure. The TFT off-current is approximately 10-12 A, the on-off current ratio is >107, the threshold voltage is 3.5 V, the sub-threshold slope is approximately 0.5 V/decade, and the linear-regime mobility is approximately 0.5 cm2 V-1 s-1. We compare the mechanical behavior of a thin film on a stiff and on a compliant substrate. The thin film stress can be reduced to one half by changing from a stiff to a compliant substrate. A new equation is developed for the radius of curvature of thin films on compliant substrates.

AB - We have fabricated high-performance amorphous silicon thin-film transistors (a-Si:H TFTs) on 2 mil. (51 μm) thick polyimide foil substrates. The TFT structure was deposited by r.f.-excited plasma enhanced chemical vapor deposition (PECVD). All TFT layers, including the gate silicon nitride, the undoped, and the n+ amorphous silicon were deposited at a substrate temperature of 150 °C. The transistors have inverted-staggered back-channel etch structure. The TFT off-current is approximately 10-12 A, the on-off current ratio is >107, the threshold voltage is 3.5 V, the sub-threshold slope is approximately 0.5 V/decade, and the linear-regime mobility is approximately 0.5 cm2 V-1 s-1. We compare the mechanical behavior of a thin film on a stiff and on a compliant substrate. The thin film stress can be reduced to one half by changing from a stiff to a compliant substrate. A new equation is developed for the radius of curvature of thin films on compliant substrates.

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