A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide

Xichun Luo, Saurav Goel, Robert L Reuben

Research output: Contribution to journalArticle

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Abstract

The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material.

Cutting hardness was adopted as a quantifier of the machinability of the polytypes of single crystal SiC. 3C-SiC offered highest cutting resistance (∼2.9 times that of silicon) followed by the 4H-SiC (∼2.8 times that of silicon) whereas 6H-SiC (∼2.1 times that of silicon) showed the least. Despite its high cutting resistance, 4H-SiC showed the minimum sub-surface crystal lattice deformed layer depth, in contrast to 6H-SiC. Further analysis of temperatures in the cutting zone and the percentage tool wear indicated that single point diamond turning (SPDT) of single crystal SiC could be limited to either 6H-SiC or 4H-SiC depending upon quality and cost considerations as these were found to be more responsive and amenable to SPDT compared to single crystal 3C-SiC.
LanguageEnglish
Pages3423-3434
Number of pages12
JournalJournal of the European Ceramic Society
Volume32
Issue number12
Early online date9 May 2012
DOIs
Publication statusPublished - Sep 2012

Fingerprint

Machinability
Silicon carbide
Single crystals
Silicon
Diamond
Diamonds
silicon carbide
Polymorphism
Crystal lattices
Molecular dynamics
Hardness
Wear of materials

Keywords

  • SiC
  • silicon
  • nanometric cutting
  • ductile regime machining
  • tool wear

Cite this

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abstract = "The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material.Cutting hardness was adopted as a quantifier of the machinability of the polytypes of single crystal SiC. 3C-SiC offered highest cutting resistance (∼2.9 times that of silicon) followed by the 4H-SiC (∼2.8 times that of silicon) whereas 6H-SiC (∼2.1 times that of silicon) showed the least. Despite its high cutting resistance, 4H-SiC showed the minimum sub-surface crystal lattice deformed layer depth, in contrast to 6H-SiC. Further analysis of temperatures in the cutting zone and the percentage tool wear indicated that single point diamond turning (SPDT) of single crystal SiC could be limited to either 6H-SiC or 4H-SiC depending upon quality and cost considerations as these were found to be more responsive and amenable to SPDT compared to single crystal 3C-SiC.",
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A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide. / Luo, Xichun; Goel, Saurav ; Reuben, Robert L .

In: Journal of the European Ceramic Society, Vol. 32, No. 12, 09.2012, p. 3423-3434.

Research output: Contribution to journalArticle

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