A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures

W. E. Purches, A. Rossi, R. Zhao, S. Kafanov, T. L. Duty, A. S. Dzurak, S. Rogge, G. C. Tettamanzi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

Original languageEnglish
Article number063503
Number of pages5
JournalApplied Physics Letters
Volume107
Issue number6
DOIs
Publication statusPublished - 10 Aug 2015

Keywords

  • CMOS
  • Schottky Barrier-MOSFET
  • quantum devices

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