A photoluminescence study of CuInSe2 single crystals ion implanted with 5 keV hydrogen

M. V. Yakushev, J. Krustok, M. Grossberg, V. A. Volkov, A. V. Mudryi, R. W. Martin

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Abstract

CuInSe2 single crystals ion implanted with 5 keV hydrogen at doses from 3 × 1014 to 1016 cm-2 are studied by photoluminescence (PL). The PL spectra before and after implantation reveal two bands, a main dominant band centred at 0.96 eV and a lower intensity band centred at 0.93 eV. Detailed analysis of the shape of these bands, their temperature and excitation intensity dependencies allow the recombination mechanisms to be identified as band-to-tail (BT) and band-to-impurity (BI), respectively. The implantation causes gradual red shifts of the bands increasing linearly with the dose. The average depth of potential fluctuations is also estimated to increase with the dose and saturates for doses above 1015 cm-2. A model is proposed which associates the potential fluctuations with the antisite defects copper on indium site and indium on copper site. The saturation is explained by full randomization of copper and indium atoms on the cation sub-lattice.

Original languageEnglish
Article number105108
Number of pages8
JournalJournal of Physics D: Applied Physics
Volume49
Issue number10
DOIs
Publication statusPublished - 8 Feb 2016

Keywords

  • CuInSe
  • ion-implantation
  • photoluminescence

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