A peeling approach for integrated manufacturing of large monolayer h‑BN crystals

Ruizhi Wang, David G. Purdie, Ye Fan, Fabien C.-P. Massabuau, Philipp Braeuninger-Weimer, Oliver J. Burton, Raoul Blume, Robert Schloegl, Antonio Lombardo, Robert S. Weatherup, Stephan Hofmann

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)
17 Downloads (Pure)


Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.
Original languageEnglish
Pages (from-to)2114-2126
Number of pages13
JournalACS Nano
Issue number2
Early online date14 Jan 2019
Publication statusPublished - 26 Feb 2019


  • h-BN
  • 2D materials
  • CVD
  • transfer
  • catalyst
  • heterostructures
  • graphene
  • platinum


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