TY - JOUR
T1 - A peeling approach for integrated manufacturing of large monolayer h‑BN crystals
AU - Wang, Ruizhi
AU - Purdie, David G.
AU - Fan, Ye
AU - Massabuau, Fabien C.-P.
AU - Braeuninger-Weimer, Philipp
AU - Burton, Oliver J.
AU - Blume, Raoul
AU - Schloegl, Robert
AU - Lombardo, Antonio
AU - Weatherup, Robert S.
AU - Hofmann, Stephan
PY - 2019/2/26
Y1 - 2019/2/26
N2 - Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.
AB - Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.
KW - h-BN
KW - 2D materials
KW - CVD
KW - transfer
KW - catalyst
KW - heterostructures
KW - graphene
KW - platinum
UR - https://www.repository.cam.ac.uk/handle/1810/288965
U2 - 10.1021/acsnano.8b08712
DO - 10.1021/acsnano.8b08712
M3 - Article
SN - 1936-0851
VL - 13
SP - 2114
EP - 2126
JO - ACS Nano
JF - ACS Nano
IS - 2
ER -