A novel fabrication method for a 64x64 matrix-addressable GaN-based micro-LED array

C.W. Jeon, H.W. Choi, M.D. Dawson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The fabrication and performance of GaN-based micro-light emitting diode (-LED) arrays with 64 × 64 elements is reported. The diameter of each element is 20 m and center-to-center spacing 30 m, giving an overall active area of the arrays of 80425 m2. Through a novel fabrication approach including a isotropic dry etching and a self-aligned isolation technique, we could easily obtain an interconnection for a matrix-addressable array device. The arrays emit >50 W per element at 3 mA drive current. Adopting a spreading metal as a p-contact, the turn-on voltage was lowered down to 3.4 V.
Original languageEnglish
Pages (from-to)79-82
Number of pages3
JournalPhysica Status Solidi A
Volume200
Issue number1
DOIs
Publication statusPublished - 29 Sep 2003

Keywords

  • GaN-based microlight emitting diode
  • LED fabrication
  • LED performance

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