A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

Emilio Nogales, K. Lorenz, K Wang, I. S. Roqan, R.W. Martin, K.P. O'Donnell, E. Alves, S. Ruffenach, O. Briot

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)


Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AIN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 degrees C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the D-5(0) - F-7(2) transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.
Original languageEnglish
Title of host publicationGaN, AIN, InN and Related Materials
EditorsM. Kuball , T. Mukai, T.H. Myers, J.M. Redwing
Place of PublicationWarrendale
Number of pages5
Publication statusPublished - Mar 2006
EventSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials research society symposium proceedings
PublisherMaterials research society
ISSN (Print)0272-9172


ConferenceSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting
CountryUnited States


  • eu-implanted gan
  • photoluminescence
  • luminescence
  • activation

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