A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

Emilio Nogales, K. Lorenz, K Wang, I. S. Roqan, R.W. Martin, K.P. O'Donnell, E. Alves, S. Ruffenach, O. Briot

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AIN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 degrees C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the D-5(0) - F-7(2) transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.
LanguageEnglish
Title of host publicationGaN, AIN, InN and Related Materials
EditorsM. Kuball , T. Mukai, T.H. Myers, J.M. Redwing
Place of PublicationWarrendale
Pages625-630
Number of pages5
Publication statusPublished - Mar 2006
EventSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials research society symposium proceedings
PublisherMaterials research society
Volume892
ISSN (Print)0272-9172

Conference

ConferenceSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting
CountryUnited States
CityBoston
Period28/11/052/12/05

Fingerprint

caps
rare earth elements
damage
annealing
gallium nitrides
electron probes
surface defects
cathodoluminescence
microanalysis
light emission
ammonia
implantation
cracks
nitrogen
atmospheres
defects
wavelengths
ions
x rays
energy

Keywords

  • eu-implanted gan
  • photoluminescence
  • luminescence
  • activation

Cite this

Nogales, E., Lorenz, K., Wang, K., Roqan, I. S., Martin, R. W., O'Donnell, K. P., ... Briot, O. (2006). A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN. In M. Kuball , T. Mukai, T. H. Myers, & J. M. Redwing (Eds.), GaN, AIN, InN and Related Materials (pp. 625-630). (Materials research society symposium proceedings; Vol. 892). Warrendale.
Nogales, Emilio ; Lorenz, K. ; Wang, K ; Roqan, I. S. ; Martin, R.W. ; O'Donnell, K.P. ; Alves, E. ; Ruffenach, S. ; Briot, O. / A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN. GaN, AIN, InN and Related Materials. editor / M. Kuball ; T. Mukai ; T.H. Myers ; J.M. Redwing. Warrendale, 2006. pp. 625-630 (Materials research society symposium proceedings).
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abstract = "Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AIN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 degrees C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the D-5(0) - F-7(2) transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.",
keywords = "eu-implanted gan, photoluminescence, luminescence, activation",
author = "Emilio Nogales and K. Lorenz and K Wang and Roqan, {I. S.} and R.W. Martin and K.P. O'Donnell and E. Alves and S. Ruffenach and O. Briot",
year = "2006",
month = "3",
language = "English",
isbn = "9781558998469",
series = "Materials research society symposium proceedings",
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Nogales, E, Lorenz, K, Wang, K, Roqan, IS, Martin, RW, O'Donnell, KP, Alves, E, Ruffenach, S & Briot, O 2006, A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN. in M Kuball , T Mukai, TH Myers & JM Redwing (eds), GaN, AIN, InN and Related Materials. Materials research society symposium proceedings, vol. 892, Warrendale, pp. 625-630, Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting , Boston, United States, 28/11/05.

A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN. / Nogales, Emilio; Lorenz, K.; Wang, K ; Roqan, I. S.; Martin, R.W.; O'Donnell, K.P.; Alves, E.; Ruffenach, S.; Briot, O.

GaN, AIN, InN and Related Materials. ed. / M. Kuball ; T. Mukai; T.H. Myers; J.M. Redwing. Warrendale, 2006. p. 625-630 (Materials research society symposium proceedings; Vol. 892).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

AU - Nogales, Emilio

AU - Lorenz, K.

AU - Wang, K

AU - Roqan, I. S.

AU - Martin, R.W.

AU - O'Donnell, K.P.

AU - Alves, E.

AU - Ruffenach, S.

AU - Briot, O.

PY - 2006/3

Y1 - 2006/3

N2 - Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AIN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 degrees C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the D-5(0) - F-7(2) transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.

AB - Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AIN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 degrees C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the D-5(0) - F-7(2) transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.

KW - eu-implanted gan

KW - photoluminescence

KW - luminescence

KW - activation

M3 - Conference contribution book

SN - 9781558998469

T3 - Materials research society symposium proceedings

SP - 625

EP - 630

BT - GaN, AIN, InN and Related Materials

A2 - Kuball , M.

A2 - Mukai, T.

A2 - Myers, T.H.

A2 - Redwing, J.M.

CY - Warrendale

ER -

Nogales E, Lorenz K, Wang K, Roqan IS, Martin RW, O'Donnell KP et al. A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN. In Kuball M, Mukai T, Myers TH, Redwing JM, editors, GaN, AIN, InN and Related Materials. Warrendale. 2006. p. 625-630. (Materials research society symposium proceedings).