A methodology to reduce the wafer to wafer thickness variation in Chemical Mechanical Planarization (CMP)

S.K. Wang, D.L. Butler

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

The requirement to consistently achieve the specific target mean film thickness within a tight tolerance (± 80nm) in the IC fabrication process flow is a great challenge. In general, except process time, all other process parameters such as applied pressure, both carrier and platen velocity, slurry flow rate and pad conditioning duration are kept constant in a typical process recipe so as to reduce the source of variations. This paper describes a methodology that can be implemented with or without the end point detection system to predict the optimal process time for CMP based on the hypothesis of contact mechanics. It captures the variation of incoming wafer thickness, material removal rate and erratic behavior of the process. It cal also serve as a comprehensive framework for better recipe development. Experimental work shows that this approach demonstrates promising results in reducing the target mean film thickness variation and works well with different layers and devices.

Original languageEnglish
Title of host publicationProceedings of the World Tribology Congress III - 2005
Place of PublicationNew York
Pages507-508
Number of pages2
Publication statusPublished - 2005
Externally publishedYes
Event2005 World Tribology Congress III - Washington, D.C., United States
Duration: 12 Sep 200516 Sep 2005

Conference

Conference2005 World Tribology Congress III
CountryUnited States
CityWashington, D.C.
Period12/09/0516/09/05

Keywords

  • platen velocity
  • pad conditioning
  • Chemical Mechanical Planarization (CMP)

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  • Cite this

    Wang, S. K., & Butler, D. L. (2005). A methodology to reduce the wafer to wafer thickness variation in Chemical Mechanical Planarization (CMP). In Proceedings of the World Tribology Congress III - 2005 (pp. 507-508). New York.