Abstract
A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads. Galvanic isolation is provided by a loop of high voltage wire, which also serves as the resonant inductor in the circuit. Fast dynamic voltage sharing is achieved by delivering equal current to each gate. A prototype is built and tested, demonstrating a 75ns switching time at 5kV using 900V MOSFETs.
| Original language | English |
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| Title of host publication | Proceedings of the 2011- 14th european conference on power electronics and applications (EPE 2011) |
| Place of Publication | New York |
| Publisher | IEEE |
| Number of pages | 10 |
| ISBN (Print) | 9789075815153 |
| Publication status | Published - 2011 |
| Event | 2011 14th European Conference on Power Electronics and Applications, EPE 2011 - Birmingham, United Kingdom Duration: 30 Aug 2011 → 1 Sept 2011 |
Conference
| Conference | 2011 14th European Conference on Power Electronics and Applications, EPE 2011 |
|---|---|
| Abbreviated title | EPE 2011 |
| Country/Territory | United Kingdom |
| City | Birmingham |
| Period | 30/08/11 → 1/09/11 |
Keywords
- gate driver
- power electronics
- MOSFET
- transformer
- isolated
- capacitance
- inductance
- logic gates
- MOSFETs
- optical switches
- wires