A holistic approach to optimise the power density of a silicon carbide (SiC) MOSFET based three-phase inverter

Ian Laird, Xibo Yuan, Neville McNeill

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

7 Citations (Scopus)

Abstract

Conventional multi-kW three-phase power converters (e.g. 380 V output) based on silicon (Si) devices (e.g. IGBTs) typically operate at switching frequencies of 50 kHz or less. By contrast, silicon carbide (SiC) MOSFETs are capable of switching at frequencies of up to several hundreds of kHz while still maintaining high efficiency operation. This opens up opportunities for greater system design optimisation, such as determining the smallest possible power converter volume and weight. Of particular interest is how the switching frequency affects the size of the passive components (e.g. heatsink, line filter, dc-link capacitor and EMI filter) which account for around 70-80% of the power converter's volume and weight. This paper presents a set of models that outline the effect that changing the switching frequency has on the design of a 2-level, 3-phase inverter using silicon carbide (SiC) MOSFETs as the active switches. In particular it will focus on the effect of the switching frequency on the design of the passive components.
Original languageEnglish
Title of host publication2015 IEEE 11th International Conference on Power Electronics and Drive Systems (PEDS)
Place of PublicationPiscataway N.J.
PublisherIEEE
ISBN (Print)978-1-4799-4401-9
DOIs
Publication statusPublished - 12 Jun 2015
Event11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
Duration: 9 Jun 201512 Jun 2015

Conference

Conference11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
CountryAustralia
CitySydney
Period9/06/1512/06/15

Keywords

  • switching frequency
  • switches
  • MOSFET
  • silicon carbide

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    Laird, I., Yuan, X., & McNeill, N. (2015). A holistic approach to optimise the power density of a silicon carbide (SiC) MOSFET based three-phase inverter. In 2015 IEEE 11th International Conference on Power Electronics and Drive Systems (PEDS) IEEE. https://doi.org/10.1109/PEDS.2015.7203465