A high efficiency voltage-fed quasi Z-source inverter with discontinuous input current using super-junction MOSFETs

Joanne Kitson, Neville McNeill

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

3 Citations (Scopus)

Abstract

This paper presents a high-efficiency quasi Z-source inverter with discontinuous input current deploying super-junction MOSFETs as bridge devices to minimise losses. Z-source inverters and quasi Z-source inverters can accommodate two major challenges exhibited by super-junction MOSFETs which would normally make their use problematic in traditional voltage source converters. Firstly, the intrinsic diodes of super-junction MOSFETs tend to exhibit adverse behaviour and secondly, the output capacitance, Coss, is highly non-linear with applied voltage increasing with reducing drain-source voltage. The losses exhibited by the bridge devices in the demonstrator converter at 1.525kW are 13W, or 0.78% and these devices do not require forced cooling, in contrast to IGBTs and p-n anti-parallel diodes when used as equivalent bridge devices.
LanguageEnglish
Title of host publication8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
Place of PublicationStevenage
DOIs
Publication statusPublished - 19 Apr 2016
Externally publishedYes
Event8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 - Hilton Hotel, Glasgow, United Kingdom
Duration: 19 Apr 201621 Apr 2016

Conference

Conference8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016
CountryUnited Kingdom
CityGlasgow
Period19/04/1621/04/16

Fingerprint

Diodes
Electric potential
Insulated gate bipolar transistors (IGBT)
Capacitance
Cooling

Keywords

  • power semiconductor diodes
  • MOSFET circuits
  • discontinuous input current
  • super junction MOSFET

Cite this

Kitson, J., & McNeill, N. (2016). A high efficiency voltage-fed quasi Z-source inverter with discontinuous input current using super-junction MOSFETs. In 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) Stevenage. https://doi.org/10.1049/cp.2016.0224
Kitson, Joanne ; McNeill, Neville. / A high efficiency voltage-fed quasi Z-source inverter with discontinuous input current using super-junction MOSFETs. 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016). Stevenage, 2016.
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abstract = "This paper presents a high-efficiency quasi Z-source inverter with discontinuous input current deploying super-junction MOSFETs as bridge devices to minimise losses. Z-source inverters and quasi Z-source inverters can accommodate two major challenges exhibited by super-junction MOSFETs which would normally make their use problematic in traditional voltage source converters. Firstly, the intrinsic diodes of super-junction MOSFETs tend to exhibit adverse behaviour and secondly, the output capacitance, Coss, is highly non-linear with applied voltage increasing with reducing drain-source voltage. The losses exhibited by the bridge devices in the demonstrator converter at 1.525kW are 13W, or 0.78{\%} and these devices do not require forced cooling, in contrast to IGBTs and p-n anti-parallel diodes when used as equivalent bridge devices.",
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Kitson, J & McNeill, N 2016, A high efficiency voltage-fed quasi Z-source inverter with discontinuous input current using super-junction MOSFETs. in 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016). Stevenage, 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016, Glasgow, United Kingdom, 19/04/16. https://doi.org/10.1049/cp.2016.0224

A high efficiency voltage-fed quasi Z-source inverter with discontinuous input current using super-junction MOSFETs. / Kitson, Joanne; McNeill, Neville.

8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016). Stevenage, 2016.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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AU - McNeill, Neville

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N2 - This paper presents a high-efficiency quasi Z-source inverter with discontinuous input current deploying super-junction MOSFETs as bridge devices to minimise losses. Z-source inverters and quasi Z-source inverters can accommodate two major challenges exhibited by super-junction MOSFETs which would normally make their use problematic in traditional voltage source converters. Firstly, the intrinsic diodes of super-junction MOSFETs tend to exhibit adverse behaviour and secondly, the output capacitance, Coss, is highly non-linear with applied voltage increasing with reducing drain-source voltage. The losses exhibited by the bridge devices in the demonstrator converter at 1.525kW are 13W, or 0.78% and these devices do not require forced cooling, in contrast to IGBTs and p-n anti-parallel diodes when used as equivalent bridge devices.

AB - This paper presents a high-efficiency quasi Z-source inverter with discontinuous input current deploying super-junction MOSFETs as bridge devices to minimise losses. Z-source inverters and quasi Z-source inverters can accommodate two major challenges exhibited by super-junction MOSFETs which would normally make their use problematic in traditional voltage source converters. Firstly, the intrinsic diodes of super-junction MOSFETs tend to exhibit adverse behaviour and secondly, the output capacitance, Coss, is highly non-linear with applied voltage increasing with reducing drain-source voltage. The losses exhibited by the bridge devices in the demonstrator converter at 1.525kW are 13W, or 0.78% and these devices do not require forced cooling, in contrast to IGBTs and p-n anti-parallel diodes when used as equivalent bridge devices.

KW - power semiconductor diodes

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Kitson J, McNeill N. A high efficiency voltage-fed quasi Z-source inverter with discontinuous input current using super-junction MOSFETs. In 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016). Stevenage. 2016 https://doi.org/10.1049/cp.2016.0224