Abstract
This paper presents a high-efficiency quasi Z-source inverter with discontinuous input current deploying super-junction MOSFETs as bridge devices to minimise losses. Z-source inverters and quasi Z-source inverters can accommodate two major challenges exhibited by super-junction MOSFETs which would normally make their use problematic in traditional voltage source converters. Firstly, the intrinsic diodes of super-junction MOSFETs tend to exhibit adverse behaviour and secondly, the output capacitance, Coss, is highly non-linear with applied voltage increasing with reducing drain-source voltage. The losses exhibited by the bridge devices in the demonstrator converter at 1.525kW are 13W, or 0.78% and these devices do not require forced cooling, in contrast to IGBTs and p-n anti-parallel diodes when used as equivalent bridge devices.
Original language | English |
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Title of host publication | 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) |
Place of Publication | Stevenage |
DOIs | |
Publication status | Published - 19 Apr 2016 |
Externally published | Yes |
Event | 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 - Hilton Hotel, Glasgow, United Kingdom Duration: 19 Apr 2016 → 21 Apr 2016 |
Conference
Conference | 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 |
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Country/Territory | United Kingdom |
City | Glasgow |
Period | 19/04/16 → 21/04/16 |
Keywords
- power semiconductor diodes
- MOSFET circuits
- discontinuous input current
- super junction MOSFET