A diamond-microchip gainnasvecsel operating at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, S. Calvez, A.J. Kemp, D. Burns, M.D. Dawson, ieee

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.
LanguageEnglish
Title of host publication2004 IEEE LEOS Annual Meeting Conference Proceedings
PublisherIEEE
Pages330-331
Number of pages1
Publication statusPublished - 2004

Fingerprint

diamonds
cavities
surface emitting lasers
continuous radiation
semiconductor lasers
diodes
mirrors

Keywords

  • diamond-microchip
  • gainnasvecsel
  • lasers

Cite this

Smith, S. A., Hopkins, J. M., Hastie, J. E., Calvez, S., Kemp, A. J., Burns, D., ... ieee (2004). A diamond-microchip gainnasvecsel operating at 1315nm. In 2004 IEEE LEOS Annual Meeting Conference Proceedings (pp. 330-331). IEEE.
Smith, S.A. ; Hopkins, J.M. ; Hastie, J.E. ; Calvez, S. ; Kemp, A.J. ; Burns, D. ; Dawson, M.D. ; ieee. / A diamond-microchip gainnasvecsel operating at 1315nm. 2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE, 2004. pp. 330-331
@inbook{229890f52b7f49cd97512b9d082e29cb,
title = "A diamond-microchip gainnasvecsel operating at 1315nm",
abstract = "We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.",
keywords = "diamond-microchip, gainnasvecsel, lasers",
author = "S.A. Smith and J.M. Hopkins and J.E. Hastie and S. Calvez and A.J. Kemp and D. Burns and M.D. Dawson and ieee",
year = "2004",
language = "English",
pages = "330--331",
booktitle = "2004 IEEE LEOS Annual Meeting Conference Proceedings",
publisher = "IEEE",

}

Smith, SA, Hopkins, JM, Hastie, JE, Calvez, S, Kemp, AJ, Burns, D, Dawson, MD & ieee 2004, A diamond-microchip gainnasvecsel operating at 1315nm. in 2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE, pp. 330-331.

A diamond-microchip gainnasvecsel operating at 1315nm. / Smith, S.A.; Hopkins, J.M.; Hastie, J.E.; Calvez, S.; Kemp, A.J.; Burns, D.; Dawson, M.D.; ieee.

2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE, 2004. p. 330-331.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - A diamond-microchip gainnasvecsel operating at 1315nm

AU - Smith, S.A.

AU - Hopkins, J.M.

AU - Hastie, J.E.

AU - Calvez, S.

AU - Kemp, A.J.

AU - Burns, D.

AU - Dawson, M.D.

AU - ieee

PY - 2004

Y1 - 2004

N2 - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

AB - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

KW - diamond-microchip

KW - gainnasvecsel

KW - lasers

UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=01363079

UR - http://dx.doi.org/10.1049/el:20045378

UR - http://dx.doi.org/10.1109/LEOS.2004.1363245

M3 - Chapter

SP - 330

EP - 331

BT - 2004 IEEE LEOS Annual Meeting Conference Proceedings

PB - IEEE

ER -

Smith SA, Hopkins JM, Hastie JE, Calvez S, Kemp AJ, Burns D et al. A diamond-microchip gainnasvecsel operating at 1315nm. In 2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE. 2004. p. 330-331