A diamond-microchip gainnasvecsel operating at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, S. Calvez, A.J. Kemp, D. Burns, M.D. Dawson, IEEE

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.
Original languageEnglish
Title of host publication2004 IEEE LEOS Annual Meeting Conference Proceedings
PublisherIEEE
Pages330-331
Number of pages1
Publication statusPublished - 2004

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Keywords

  • diamond-microchip
  • gainnasvecsel
  • lasers

Cite this

Smith, S. A., Hopkins, J. M., Hastie, J. E., Calvez, S., Kemp, A. J., Burns, D., ... IEEE (2004). A diamond-microchip gainnasvecsel operating at 1315nm. In 2004 IEEE LEOS Annual Meeting Conference Proceedings (pp. 330-331). IEEE.