A diamond-microchip GaInNAs VECSEL operating at 1315nm

S.A. Smith; J.M. Hopkins; J.E. Hastie; S. Calvez; A.J. Kemp; D. Burns; M.D. Dawson; IEEE

doi:10.1109/LEOS.2004.1363245

A diamond-microchip GaInNAs VECSEL operating at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, S. Calvez, A.J. Kemp, D. Burns, M.D. Dawson, IEEE

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

Original language	English
Title of host publication	2004 IEEE LEOS Annual Meeting Conference Proceedings
Place of Publication	Piscataway, N.J.
Publisher	IEEE
Pages	330-331
Number of pages	1
ISBN (Print)	0780385578
DOIs	https://doi.org/10.1109/LEOS.2004.1363245
Publication status	Published - 2004

Keywords

diamond-microchip
gainnasvecsel
lasers

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10.1109/LEOS.2004.1363245

Cite this

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title = "A diamond-microchip GaInNAs VECSEL operating at 1315nm",

abstract = "We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.",

keywords = "diamond-microchip, gainnasvecsel, lasers",

author = "S.A. Smith and J.M. Hopkins and J.E. Hastie and S. Calvez and A.J. Kemp and D. Burns and M.D. Dawson and IEEE",

year = "2004",

doi = "10.1109/LEOS.2004.1363245",

language = "English",

isbn = "0780385578",

pages = "330--331",

booktitle = "2004 IEEE LEOS Annual Meeting Conference Proceedings",

publisher = "IEEE",

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T1 - A diamond-microchip GaInNAs VECSEL operating at 1315nm

AU - Smith, S.A.

AU - Hopkins, J.M.

AU - Hastie, J.E.

AU - Calvez, S.

AU - Kemp, A.J.

AU - Burns, D.

AU - Dawson, M.D.

AU - IEEE

PY - 2004

Y1 - 2004

N2 - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

AB - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

KW - diamond-microchip

KW - gainnasvecsel

KW - lasers

U2 - 10.1109/LEOS.2004.1363245

DO - 10.1109/LEOS.2004.1363245

M3 - Conference contribution book

SN - 0780385578

SP - 330

EP - 331

BT - 2004 IEEE LEOS Annual Meeting Conference Proceedings

PB - IEEE

CY - Piscataway, N.J.

ER -

A diamond-microchip GaInNAs VECSEL operating at 1315nm

Abstract

Keywords

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