A diamond-microchip GaInNAs VECSEL operating at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, S. Calvez, A. Kemp, D. Burns, M.D. Dawson

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

Original languageEnglish
Pages330-331
Number of pages2
DOIs
Publication statusPublished - Nov 2004
EventIEEE-LEOS Annual Meeting - Puerto Rico
Duration: 7 Nov 200411 Nov 2004

Conference

ConferenceIEEE-LEOS Annual Meeting
CityPuerto Rico
Period7/11/0411/11/04

Keywords

  • Vertical cavity surface emitting lasers
  • dielectrics
  • gallium arsenide
  • laser excitation
  • microchip lasers
  • optical pumping
  • optical surface waves
  • pump lasers
  • semiconductor lasers
  • surface emitting lasers

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