A diamond-microchip GaInNAs VECSEL operating at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, S. Calvez, A. Kemp, D. Burns, M.D. Dawson

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

Original languageEnglish
Pages330-331
Number of pages2
DOIs
Publication statusPublished - Nov 2004
EventIEEE-LEOS Annual Meeting - Puerto Rico
Duration: 7 Nov 200411 Nov 2004

Conference

ConferenceIEEE-LEOS Annual Meeting
CityPuerto Rico
Period7/11/0411/11/04

Fingerprint

diamonds
cavities
surface emitting lasers
continuous radiation
semiconductor lasers
diodes
mirrors

Keywords

  • Vertical cavity surface emitting lasers
  • dielectrics
  • gallium arsenide
  • laser excitation
  • microchip lasers
  • optical pumping
  • optical surface waves
  • pump lasers
  • semiconductor lasers
  • surface emitting lasers

Cite this

Smith, S. A., Hopkins, J. M., Hastie, J. E., Calvez, S., Kemp, A., Burns, D., & Dawson, M. D. (2004). A diamond-microchip GaInNAs VECSEL operating at 1315nm. 330-331. Paper presented at IEEE-LEOS Annual Meeting, Puerto Rico, . https://doi.org/10.1109/LEOS.2004.1363245
Smith, S.A. ; Hopkins, J.M. ; Hastie, J.E. ; Calvez, S. ; Kemp, A. ; Burns, D. ; Dawson, M.D. / A diamond-microchip GaInNAs VECSEL operating at 1315nm. Paper presented at IEEE-LEOS Annual Meeting, Puerto Rico, .2 p.
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title = "A diamond-microchip GaInNAs VECSEL operating at 1315nm",
abstract = "We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.",
keywords = "Vertical cavity surface emitting lasers , dielectrics , gallium arsenide, laser excitation, microchip lasers, optical pumping, optical surface waves, pump lasers, semiconductor lasers, surface emitting lasers",
author = "S.A. Smith and J.M. Hopkins and J.E. Hastie and S. Calvez and A. Kemp and D. Burns and M.D. Dawson",
year = "2004",
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Smith, SA, Hopkins, JM, Hastie, JE, Calvez, S, Kemp, A, Burns, D & Dawson, MD 2004, 'A diamond-microchip GaInNAs VECSEL operating at 1315nm' Paper presented at IEEE-LEOS Annual Meeting, Puerto Rico, 7/11/04 - 11/11/04, pp. 330-331. https://doi.org/10.1109/LEOS.2004.1363245

A diamond-microchip GaInNAs VECSEL operating at 1315nm. / Smith, S.A.; Hopkins, J.M.; Hastie, J.E.; Calvez, S.; Kemp, A.; Burns, D.; Dawson, M.D.

2004. 330-331 Paper presented at IEEE-LEOS Annual Meeting, Puerto Rico, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - A diamond-microchip GaInNAs VECSEL operating at 1315nm

AU - Smith, S.A.

AU - Hopkins, J.M.

AU - Hastie, J.E.

AU - Calvez, S.

AU - Kemp, A.

AU - Burns, D.

AU - Dawson, M.D.

PY - 2004/11

Y1 - 2004/11

N2 - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

AB - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

KW - Vertical cavity surface emitting lasers

KW - dielectrics

KW - gallium arsenide

KW - laser excitation

KW - microchip lasers

KW - optical pumping

KW - optical surface waves

KW - pump lasers

KW - semiconductor lasers

KW - surface emitting lasers

U2 - 10.1109/LEOS.2004.1363245

DO - 10.1109/LEOS.2004.1363245

M3 - Paper

SP - 330

EP - 331

ER -

Smith SA, Hopkins JM, Hastie JE, Calvez S, Kemp A, Burns D et al. A diamond-microchip GaInNAs VECSEL operating at 1315nm. 2004. Paper presented at IEEE-LEOS Annual Meeting, Puerto Rico, . https://doi.org/10.1109/LEOS.2004.1363245