A diamond-microchip GaInNAs VECSEL operating at 1315nm

S.A. Smith; J.M. Hopkins; J.E. Hastie; S. Calvez; A. Kemp; D. Burns; M.D. Dawson

doi:10.1109/LEOS.2004.1363245

A diamond-microchip GaInNAs VECSEL operating at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, S. Calvez, A. Kemp, D. Burns, M.D. Dawson

Research output: Contribution to conference › Paper

2 Citations (Scopus)

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

Original language	English
Pages	330-331
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2004.1363245
Publication status	Published - Nov 2004
Event	IEEE-LEOS Annual Meeting - Puerto Rico Duration: 7 Nov 2004 → 11 Nov 2004

Conference

Conference	IEEE-LEOS Annual Meeting
City	Puerto Rico
Period	7/11/04 → 11/11/04

Keywords

Vertical cavity surface emitting lasers
dielectrics
gallium arsenide
laser excitation
microchip lasers
optical pumping
optical surface waves
pump lasers
semiconductor lasers
surface emitting lasers

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10.1109/LEOS.2004.1363245

Cite this

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title = "A diamond-microchip GaInNAs VECSEL operating at 1315nm",

abstract = "We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader. ",

keywords = "Vertical cavity surface emitting lasers , dielectrics , gallium arsenide, laser excitation, microchip lasers, optical pumping, optical surface waves, pump lasers, semiconductor lasers, surface emitting lasers",

author = "S.A. Smith and J.M. Hopkins and J.E. Hastie and S. Calvez and A. Kemp and D. Burns and M.D. Dawson",

year = "2004",

month = nov,

doi = "10.1109/LEOS.2004.1363245",

language = "English",

pages = "330--331",

note = "IEEE-LEOS Annual Meeting ; Conference date: 07-11-2004 Through 11-11-2004",

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TY - CONF

T1 - A diamond-microchip GaInNAs VECSEL operating at 1315nm

AU - Smith, S.A.

AU - Hopkins, J.M.

AU - Hastie, J.E.

AU - Calvez, S.

AU - Kemp, A.

AU - Burns, D.

AU - Dawson, M.D.

PY - 2004/11

Y1 - 2004/11

N2 - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

AB - We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

KW - Vertical cavity surface emitting lasers

KW - dielectrics

KW - gallium arsenide

KW - laser excitation

KW - microchip lasers

KW - optical pumping

KW - optical surface waves

KW - pump lasers

KW - semiconductor lasers

KW - surface emitting lasers

U2 - 10.1109/LEOS.2004.1363245

DO - 10.1109/LEOS.2004.1363245

M3 - Paper

SP - 330

EP - 331

T2 - IEEE-LEOS Annual Meeting

Y2 - 7 November 2004 through 11 November 2004

ER -

A diamond-microchip GaInNAs VECSEL operating at 1315nm

Abstract

Conference

Keywords

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