Abstract
Resonant gate drivers which include galvanic isolation are reviewed. A design method for transformer-isolated resonant gate drivers is presented, in which the transformer is also used as the resonant inductor in the gate driver circuit. A prototype gate driver is built and evaluated in a 400 V 5 A inverter.
Original language | English |
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Title of host publication | 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014) |
Place of Publication | Piscataway, N.J. |
Publisher | IEEE |
ISBN (Print) | 978-1-84919-815-8 |
DOIs | |
Publication status | Published - 10 Apr 2014 |
Externally published | Yes |
Event | 7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014 - Manchester, United Kingdom Duration: 8 Apr 2014 → 10 Apr 2014 |
Conference
Conference | 7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014 |
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Abbreviated title | PEMD 2014 |
Country/Territory | United Kingdom |
City | Manchester |
Period | 8/04/14 → 10/04/14 |
Keywords
- gate driver
- high frequency
- MOSFET