A design method for isolated resonant gate drivers

Philip Anthony, Neville McNeill

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

1 Citation (Scopus)

Abstract

Resonant gate drivers which include galvanic isolation are reviewed. A design method for transformer-isolated resonant gate drivers is presented, in which the transformer is also used as the resonant inductor in the gate driver circuit. A prototype gate driver is built and evaluated in a 400 V 5 A inverter.
Original languageEnglish
Title of host publication7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)
Place of PublicationPiscataway, N.J.
PublisherIEEE
ISBN (Print)978-1-84919-815-8
DOIs
Publication statusPublished - 10 Apr 2014
Externally publishedYes
Event7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014 - Manchester, United Kingdom
Duration: 8 Apr 201410 Apr 2014

Conference

Conference7th IET International Conference on Power Electronics, Machines and Drives, PEMD 2014
Abbreviated titlePEMD 2014
CountryUnited Kingdom
CityManchester
Period8/04/1410/04/14

Keywords

  • gate driver
  • high frequency
  • MOSFET

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  • Cite this

    Anthony, P., & McNeill, N. (2014). A design method for isolated resonant gate drivers. In 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014) Piscataway, N.J.: IEEE. https://doi.org/10.1049/cp.2014.0332