A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI

Harry C.P. Dymond, Jianjing Wang, Dawei Liu, Jeremy J.O. Dalton, Neville McNeill, Dinesh Pamunuwa, Simon J. Hollis, Bernard H. Stark

Research output: Contribution to journalArticle

  • 6 Citations

Abstract

Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited to altering a single drive parameter once per switching event, either during or outside of the transient. This paper demonstrates a gate driver with a timing resolution and range of output resistance levels that surpass those of existing gate drivers or arbitrary waveform generators. It is shown to permit active gate driving with a bandwidth that is high enough to shape a GaN switching during the transient. The programmable gate driver has integrated high-speed memory, control logic, and multiple parallel output stages. During switching transients, the gate driver can activate a near-arbitrary sequence of pull-up or pull-down output resistances between 0.12 and 64 A hybrid of clocked and asynchronous control logic with 150-ps delay elements achieves an effective resistance update rate of 6.7 GHz during switching events. This active gate driver is evaluated in a 1-MHz bridge-leg converter using EPC2015 GaN FETs. The results show that aggressive manipulation of the gate-drive resistance at sub-nanosecond resolutions can profile gate waveforms of the GaN FET, thereby beneficially shaping the switch-node voltage waveform in the power circuit. Examples of open-loop active gate driving are demonstrated that maintain the low switching loss of constant-strength gate driving, while reducing overshoot, oscillation, and EMI-generating high-frequency spectral content.

LanguageEnglish
Pages581-594
Number of pages14
JournalIEEE Transactions on Power Electronics
Volume33
Issue number1
Early online date17 Mar 2017
DOIs
StatePublished - 1 Jan 2018

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Field effect transistors
Power converters
Switches
Bandwidth
Data storage equipment
Networks (circuits)
Electric potential

Keywords

  • active gate driver
  • electromagnetic interference (EMI)
  • GaN FETs
  • gate overshoot
  • gate signal profiling
  • oscillation
  • programmable gate resistance

Cite this

Dymond, H. C. P., Wang, J., Liu, D., Dalton, J. J. O., McNeill, N., Pamunuwa, D., ... Stark, B. H. (2018). A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI. IEEE Transactions on Power Electronics, 33(1), 581-594. DOI: 10.1109/TPEL.2017.2669879
Dymond, Harry C.P. ; Wang, Jianjing ; Liu, Dawei ; Dalton, Jeremy J.O. ; McNeill, Neville ; Pamunuwa, Dinesh ; Hollis, Simon J. ; Stark, Bernard H./ A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI. In: IEEE Transactions on Power Electronics. 2018 ; Vol. 33, No. 1. pp. 581-594
@article{c8d38bc29a3a403bb55744bc0ccb628e,
title = "A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI",
abstract = "Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited to altering a single drive parameter once per switching event, either during or outside of the transient. This paper demonstrates a gate driver with a timing resolution and range of output resistance levels that surpass those of existing gate drivers or arbitrary waveform generators. It is shown to permit active gate driving with a bandwidth that is high enough to shape a GaN switching during the transient. The programmable gate driver has integrated high-speed memory, control logic, and multiple parallel output stages. During switching transients, the gate driver can activate a near-arbitrary sequence of pull-up or pull-down output resistances between 0.12 and 64 A hybrid of clocked and asynchronous control logic with 150-ps delay elements achieves an effective resistance update rate of 6.7 GHz during switching events. This active gate driver is evaluated in a 1-MHz bridge-leg converter using EPC2015 GaN FETs. The results show that aggressive manipulation of the gate-drive resistance at sub-nanosecond resolutions can profile gate waveforms of the GaN FET, thereby beneficially shaping the switch-node voltage waveform in the power circuit. Examples of open-loop active gate driving are demonstrated that maintain the low switching loss of constant-strength gate driving, while reducing overshoot, oscillation, and EMI-generating high-frequency spectral content.",
keywords = "active gate driver, electromagnetic interference (EMI), GaN FETs, gate overshoot, gate signal profiling, oscillation, programmable gate resistance",
author = "Dymond, {Harry C.P.} and Jianjing Wang and Dawei Liu and Dalton, {Jeremy J.O.} and Neville McNeill and Dinesh Pamunuwa and Hollis, {Simon J.} and Stark, {Bernard H.}",
year = "2018",
month = "1",
day = "1",
doi = "10.1109/TPEL.2017.2669879",
language = "English",
volume = "33",
pages = "581--594",
journal = "IEEE Transactions on Power Electronics",
issn = "0885-8993",
number = "1",

}

Dymond, HCP, Wang, J, Liu, D, Dalton, JJO, McNeill, N, Pamunuwa, D, Hollis, SJ & Stark, BH 2018, 'A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI' IEEE Transactions on Power Electronics, vol. 33, no. 1, pp. 581-594. DOI: 10.1109/TPEL.2017.2669879

A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI. / Dymond, Harry C.P.; Wang, Jianjing; Liu, Dawei; Dalton, Jeremy J.O.; McNeill, Neville; Pamunuwa, Dinesh; Hollis, Simon J.; Stark, Bernard H.

In: IEEE Transactions on Power Electronics, Vol. 33, No. 1, 01.01.2018, p. 581-594.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI

AU - Dymond,Harry C.P.

AU - Wang,Jianjing

AU - Liu,Dawei

AU - Dalton,Jeremy J.O.

AU - McNeill,Neville

AU - Pamunuwa,Dinesh

AU - Hollis,Simon J.

AU - Stark,Bernard H.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited to altering a single drive parameter once per switching event, either during or outside of the transient. This paper demonstrates a gate driver with a timing resolution and range of output resistance levels that surpass those of existing gate drivers or arbitrary waveform generators. It is shown to permit active gate driving with a bandwidth that is high enough to shape a GaN switching during the transient. The programmable gate driver has integrated high-speed memory, control logic, and multiple parallel output stages. During switching transients, the gate driver can activate a near-arbitrary sequence of pull-up or pull-down output resistances between 0.12 and 64 A hybrid of clocked and asynchronous control logic with 150-ps delay elements achieves an effective resistance update rate of 6.7 GHz during switching events. This active gate driver is evaluated in a 1-MHz bridge-leg converter using EPC2015 GaN FETs. The results show that aggressive manipulation of the gate-drive resistance at sub-nanosecond resolutions can profile gate waveforms of the GaN FET, thereby beneficially shaping the switch-node voltage waveform in the power circuit. Examples of open-loop active gate driving are demonstrated that maintain the low switching loss of constant-strength gate driving, while reducing overshoot, oscillation, and EMI-generating high-frequency spectral content.

AB - Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited to altering a single drive parameter once per switching event, either during or outside of the transient. This paper demonstrates a gate driver with a timing resolution and range of output resistance levels that surpass those of existing gate drivers or arbitrary waveform generators. It is shown to permit active gate driving with a bandwidth that is high enough to shape a GaN switching during the transient. The programmable gate driver has integrated high-speed memory, control logic, and multiple parallel output stages. During switching transients, the gate driver can activate a near-arbitrary sequence of pull-up or pull-down output resistances between 0.12 and 64 A hybrid of clocked and asynchronous control logic with 150-ps delay elements achieves an effective resistance update rate of 6.7 GHz during switching events. This active gate driver is evaluated in a 1-MHz bridge-leg converter using EPC2015 GaN FETs. The results show that aggressive manipulation of the gate-drive resistance at sub-nanosecond resolutions can profile gate waveforms of the GaN FET, thereby beneficially shaping the switch-node voltage waveform in the power circuit. Examples of open-loop active gate driving are demonstrated that maintain the low switching loss of constant-strength gate driving, while reducing overshoot, oscillation, and EMI-generating high-frequency spectral content.

KW - active gate driver

KW - electromagnetic interference (EMI)

KW - GaN FETs

KW - gate overshoot

KW - gate signal profiling

KW - oscillation

KW - programmable gate resistance

UR - http://www.scopus.com/inward/record.url?scp=85032227536&partnerID=8YFLogxK

U2 - 10.1109/TPEL.2017.2669879

DO - 10.1109/TPEL.2017.2669879

M3 - Article

VL - 33

SP - 581

EP - 594

JO - IEEE Transactions on Power Electronics

T2 - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

SN - 0885-8993

IS - 1

ER -

Dymond HCP, Wang J, Liu D, Dalton JJO, McNeill N, Pamunuwa D et al. A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI. IEEE Transactions on Power Electronics. 2018 Jan 1;33(1):581-594. Available from, DOI: 10.1109/TPEL.2017.2669879