A 3.5-Gb/s CMOS burst-mode laser driver with automatic power control using single power supply

Day-Uei Li; Li-Ren Huang; Chia-Ming Tsai

doi:10.1109/ISCAS.2005.1465882

A 3.5-Gb/s CMOS burst-mode laser driver with automatic power control using single power supply

Day-Uei Li, Li-Ren Huang, Chia-Ming Tsai

Strathclyde Institute Of Pharmacy And Biomedical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

8 Citations (Scopus)

Abstract

A 3.5-Gb/s burst-mode laser driver with automatic power control (APC) fabricated in 0.25 /spl mu/m 1P5M CMOS process is presented. With the proposed waveform shaping circuit, the driver could operate under a single 3.3 V power supply without sacrificing output headroom, and it could output 6 mA to 60 mA modulation current with negligible overshoot. Measurements on mounted chips show clear electrical eye diagrams operating over 3.5-Gb/s data rate with typical rise/fall times (20% to 80%) of 84/97 ps. Moreover, an optical eye diagram is also demonstrated by connecting the driver to a 1.25-Gb/s 1310 nm laser diode. The laser turn on/off time is about 30/20 ns, much less than the criterion (512 ns) that the IEEE 802.3ah standard has proposed.

Original language	English
Title of host publication	IEEE International Symposium on Circuits and Systems (ISCAS), 2005
Place of Publication	Piscataway
Publisher	IEEE
Pages	5501-5504
Number of pages	4
ISBN (Print)	0780388348
DOIs	https://doi.org/10.1109/ISCAS.2005.1465882
Publication status	Published - 25 Jul 2005

Keywords

power lasers
power control
power supplies
driver circuits
CMOS process
electric variables measurement
semiconductor device measurement
optical modulation
signal analysis
joining process

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Cite this

@inproceedings{16923ddfe48740618666ef61e6bc2cdb,

title = "A 3.5-Gb/s CMOS burst-mode laser driver with automatic power control using single power supply",

abstract = "A 3.5-Gb/s burst-mode laser driver with automatic power control (APC) fabricated in 0.25 /spl mu/m 1P5M CMOS process is presented. With the proposed waveform shaping circuit, the driver could operate under a single 3.3 V power supply without sacrificing output headroom, and it could output 6 mA to 60 mA modulation current with negligible overshoot. Measurements on mounted chips show clear electrical eye diagrams operating over 3.5-Gb/s data rate with typical rise/fall times (20% to 80%) of 84/97 ps. Moreover, an optical eye diagram is also demonstrated by connecting the driver to a 1.25-Gb/s 1310 nm laser diode. The laser turn on/off time is about 30/20 ns, much less than the criterion (512 ns) that the IEEE 802.3ah standard has proposed.",

keywords = "power lasers, power control, power supplies, driver circuits, CMOS process, electric variables measurement, semiconductor device measurement, optical modulation, signal analysis, joining process",

author = "Day-Uei Li and Li-Ren Huang and Chia-Ming Tsai",

year = "2005",

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doi = "10.1109/ISCAS.2005.1465882",

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AU - Li, Day-Uei

AU - Huang, Li-Ren

AU - Tsai, Chia-Ming

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Y1 - 2005/7/25

N2 - A 3.5-Gb/s burst-mode laser driver with automatic power control (APC) fabricated in 0.25 /spl mu/m 1P5M CMOS process is presented. With the proposed waveform shaping circuit, the driver could operate under a single 3.3 V power supply without sacrificing output headroom, and it could output 6 mA to 60 mA modulation current with negligible overshoot. Measurements on mounted chips show clear electrical eye diagrams operating over 3.5-Gb/s data rate with typical rise/fall times (20% to 80%) of 84/97 ps. Moreover, an optical eye diagram is also demonstrated by connecting the driver to a 1.25-Gb/s 1310 nm laser diode. The laser turn on/off time is about 30/20 ns, much less than the criterion (512 ns) that the IEEE 802.3ah standard has proposed.

AB - A 3.5-Gb/s burst-mode laser driver with automatic power control (APC) fabricated in 0.25 /spl mu/m 1P5M CMOS process is presented. With the proposed waveform shaping circuit, the driver could operate under a single 3.3 V power supply without sacrificing output headroom, and it could output 6 mA to 60 mA modulation current with negligible overshoot. Measurements on mounted chips show clear electrical eye diagrams operating over 3.5-Gb/s data rate with typical rise/fall times (20% to 80%) of 84/97 ps. Moreover, an optical eye diagram is also demonstrated by connecting the driver to a 1.25-Gb/s 1310 nm laser diode. The laser turn on/off time is about 30/20 ns, much less than the criterion (512 ns) that the IEEE 802.3ah standard has proposed.

KW - power lasers

KW - power control

KW - power supplies

KW - driver circuits

KW - CMOS process

KW - electric variables measurement

KW - semiconductor device measurement

KW - optical modulation

KW - signal analysis

KW - joining process

U2 - 10.1109/ISCAS.2005.1465882

DO - 10.1109/ISCAS.2005.1465882

M3 - Conference contribution book

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BT - IEEE International Symposium on Circuits and Systems (ISCAS), 2005

PB - IEEE

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