A 192 X 128 time correlated SPAD image sensor in 40nm CMOS technology

Robert K. Henderson; Nick Johnston; Francesco Mattioli Della Rocca; Haochang Chen; David Day-Uei Li; Graham Hungerford; Richard Hirsch; David McLoskey; Philip Yip; David J.S. Birch

doi:10.1109/JSSC.2019.2905163

A 192 X 128 time correlated SPAD image sensor in 40nm CMOS technology

Robert K. Henderson, Nick Johnston, Francesco Mattioli Della Rocca, Haochang Chen, David Day-Uei Li, Graham Hungerford, Richard Hirsch, David McLoskey, Philip Yip, David J.S. Birch

Research output: Contribution to journal › Article › peer-review

123 Citations (Scopus)

345 Downloads (Pure)

Abstract

A 192 X 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4\,\,\mu \text {m} \times 9.2\,\,\mu \text{m} pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps full-width half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.

Original language	English
Pages (from-to)	1907-1916
Number of pages	10
Journal	IEEE Journal of Solid-State Circuits
Volume	54
Issue number	7
Early online date	5 Apr 2019
DOIs	https://doi.org/10.1109/JSSC.2019.2905163
Publication status	Published - 31 Jul 2019

Keywords

single photon avalanche diode
CMOS image sensor
fluorescence lifetime imaging microscopy
laser ranging

Access to Document

10.1109/JSSC.2019.2905163

Henderson-etal-IEEE-JSSC-2019-time-correlated-SPAD-image-sensor-in-40nm-CMOS-technologyAccepted author manuscript, 3.33 MB

David Li
- david.listrath.acuk
- Health and Wellbeing
- Biomedical Engineering - Reader
Person: Academic

123 Citations
1 Keynote
1 Article
1 Conference Contribution
1 Review article

Emerging clinical applications of fluorescence using SPADs
Birch, D., 15 Jun 2022.
Research output: Contribution to conference › Keynote
Fluorescence guided surgery
Stewart, H. L. & Birch, D. J. S., 26 Aug 2021, In: Methods and Applications in Fluorescence . 9, 4, 26 p., 042002.
Research output: Contribution to journal › Review article › peer-review

Open Access
File
56 Citations (Scopus)

23 Downloads (Pure)
A rapid analysis platform for investigating the cellular locations of bacteria using two-photon fluorescence lifetime imaging microscopy
Sapermsap, N., Li, D.D.-U., Al-Hemedawi, R., Li, Y., Yu, J., Birch, D. & Chen, Y., 14 Apr 2020, In: Methods and Applications in Fluorescence . 8, 3, 10 p., 034001.
Research output: Contribution to journal › Article › peer-review

Open Access
File
9 Citations (Scopus)

38 Downloads (Pure)

Cite this

@article{cf2991eaef2f46b2902d0afea83213ee,

title = "A 192 X 128 time correlated SPAD image sensor in 40nm CMOS technology",

abstract = "A 192 X 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4\,\,\mu \text {m} \times 9.2\,\,\mu \text{m} pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps full-width half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.",

keywords = "single photon avalanche diode, CMOS image sensor, fluorescence lifetime imaging microscopy, laser ranging",

author = "Henderson, {Robert K.} and Nick Johnston and {Mattioli Della Rocca}, Francesco and Haochang Chen and Li, {David Day-Uei} and Graham Hungerford and Richard Hirsch and David McLoskey and Philip Yip and Birch, {David J.S.}",

note = "{\textcopyright} 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",

year = "2019",

month = jul,

day = "31",

doi = "10.1109/JSSC.2019.2905163",

language = "English",

volume = "54",

pages = "1907--1916",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

number = "7",

}

TY - JOUR

T1 - A 192 X 128 time correlated SPAD image sensor in 40nm CMOS technology

AU - Henderson, Robert K.

AU - Johnston, Nick

AU - Mattioli Della Rocca, Francesco

AU - Chen, Haochang

AU - Li, David Day-Uei

AU - Hungerford, Graham

AU - Hirsch, Richard

AU - McLoskey, David

AU - Yip, Philip

AU - Birch, David J.S.

N1 - © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2019/7/31

Y1 - 2019/7/31

N2 - A 192 X 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4\,\,\mu \text {m} \times 9.2\,\,\mu \text{m} pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps full-width half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.

AB - A 192 X 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4\,\,\mu \text {m} \times 9.2\,\,\mu \text{m} pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps full-width half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.

KW - single photon avalanche diode

KW - CMOS image sensor

KW - fluorescence lifetime imaging microscopy

KW - laser ranging

U2 - 10.1109/JSSC.2019.2905163

DO - 10.1109/JSSC.2019.2905163

M3 - Article

SN - 0018-9200

VL - 54

SP - 1907

EP - 1916

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 7

ER -

A 192 X 128 time correlated SPAD image sensor in 40nm CMOS technology

Abstract

Keywords

Access to Document

Fingerprint

Profiles

David Li

Research output

Emerging clinical applications of fluorescence using SPADs

Fluorescence guided surgery

A rapid analysis platform for investigating the cellular locations of bacteria using two-photon fluorescence lifetime imaging microscopy

Cite this