Abstract
A 192 x 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) image sensor is implemented in STMicroelectronics 40nm CMOS technology. The 13 % fill-factor, 18.4 x 9.2 mm pixel contains a 33 ps resolution, 135 ns full-scale, 12-bit time to digital converter (TDC) with 0.9 LSB differential and 8.7 LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219 ps fullwidth half maximum (FWHM) impulse response function (IRF) and a 5 mW core power consumption and is operable at up to 18.6 kfps. Cylindrical microlenses with a concentration factor of 3.15 increase the fill-factor to 41%. The median dark count rate (DCR) is 25 Hz at 1.5 V excess bias. Fluorescence lifetime imaging (FLIM) results are presented.
| Original language | English |
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| Title of host publication | 44th European Solid-State Circuits Conference (ESSCIRC) 2018 |
| Place of Publication | Piscataway, NJ |
| Publisher | IEEE |
| Number of pages | 4 |
| Publication status | Published - 4 Sep 2018 |
| Event | 44th European Solid-State Circuits Conference - Dresden, Germany Duration: 3 Sep 2018 → 6 Sep 2018 |
Conference
| Conference | 44th European Solid-State Circuits Conference |
|---|---|
| Country | Germany |
| City | Dresden |
| Period | 3/09/18 → 6/09/18 |
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Keywords
- single photon avalanche diode
- photon counting
Cite this
Henderson, R. K., Johnston, N., Chen, H., Li, D. D-U., Hungerford, G., Hirsch, R., ... Birch, D. (2018). A 192 x 128 time correlated single photon counting imager in 40nm CMOS technology. In 44th European Solid-State Circuits Conference (ESSCIRC) 2018 Piscataway, NJ: IEEE.