A 192 x 128 time correlated single photon counting imager in 40nm CMOS technology

Robert K. Henderson; Nick Johnston; Haochang Chen; David Day-Uei Li; Graham Hungerford; Richard Hirsch; Philip Yip; David McLoskey; David Birch

A 192 x 128 time correlated single photon counting imager in 40nm CMOS technology

Robert K. Henderson, Nick Johnston, Haochang Chen, David Day-Uei Li, Graham Hungerford, Richard Hirsch, Philip Yip, David McLoskey, David Birch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

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Abstract

A 192 x 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) image sensor is implemented in STMicroelectronics 40nm CMOS technology. The 13 % fill-factor, 18.4 x 9.2 mm pixel contains a 33 ps resolution, 135 ns full-scale, 12-bit time to digital converter (TDC) with 0.9 LSB differential and 8.7 LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219 ps fullwidth half maximum (FWHM) impulse response function (IRF) and a 5 mW core power consumption and is operable at up to 18.6 kfps. Cylindrical microlenses with a concentration factor of 3.15 increase the fill-factor to 41%. The median dark count rate (DCR) is 25 Hz at 1.5 V excess bias. Fluorescence lifetime imaging (FLIM) results are presented.

Original language	English
Title of host publication	44th European Solid-State Circuits Conference (ESSCIRC) 2018
Place of Publication	Piscataway, NJ
Publisher	IEEE
Number of pages	4
Publication status	Published - 4 Sep 2018
Event	44th European Solid-State Circuits Conference - Dresden, Germany Duration: 3 Sep 2018 → 6 Sep 2018

Conference

Conference	44th European Solid-State Circuits Conference
Country	Germany
City	Dresden
Period	3/09/18 → 6/09/18

Keywords

single photon avalanche diode
photon counting

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Henderson-etal-ESSCIRC2018-A-192-x-128-time-correlated-single-photon-countingAccepted author manuscript, 2.71 MB

https://www.esscirc-essderc2018.org/

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UK Quantum Technology Hub in Quantum Enhanced Imaging (Quantic)
Birch, D., Dawson, M., Dawson, M., Strain, M., Chen, Y., Gu, E., Li, D., Strain, M., Watson, I., Jeffers, J., Oppo, G. & Yao, A.
EPSRC (Engineering and Physical Sciences Research Council), HORIBA Jobin Yvon IBH Ltd
1/10/14 → 31/10/19
Project: Research

1 Article
1 Conference Contribution

A rapid analysis platform for investigating the cellular locations of bacteria using two-photon fluorescence lifetime imaging microscopy
Sapermsap, N., Li, D. D-U., Al-Hemedawi, R., Li, Y., Yu, J., Birch, D. & Chen, Y., 14 Apr 2020, In : Methods and Applications in Fluorescence . 8, 3, 10 p., 034001.
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TCSPC camera for real time video rate FLIM acquisition based on CMOS technology
Hungerford, G., McLoskey, D., Hirsch, R., Yip, P., Birch, D., Johnston, N. & Henderson, R., 7 Feb 2020, In : Biophysical Journal. 118, 3, Supplement 1, p. 308a-308a 1 p.
Research output: Contribution to journal › Conference Contribution

Cite this

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title = "A 192 x 128 time correlated single photon counting imager in 40nm CMOS technology",

abstract = "A 192 x 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) image sensor is implemented in STMicroelectronics 40nm CMOS technology. The 13 % fill-factor, 18.4 x 9.2 mm pixel contains a 33 ps resolution, 135 ns full-scale, 12-bit time to digital converter (TDC) with 0.9 LSB differential and 8.7 LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219 ps fullwidth half maximum (FWHM) impulse response function (IRF) and a 5 mW core power consumption and is operable at up to 18.6 kfps. Cylindrical microlenses with a concentration factor of 3.15 increase the fill-factor to 41%. The median dark count rate (DCR) is 25 Hz at 1.5 V excess bias. Fluorescence lifetime imaging (FLIM) results are presented.",

keywords = "single photon avalanche diode, photon counting",

author = "Henderson, {Robert K.} and Nick Johnston and Haochang Chen and Li, {David Day-Uei} and Graham Hungerford and Richard Hirsch and Philip Yip and David McLoskey and David Birch",

note = "{\textcopyright} 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.; 44th European Solid-State Circuits Conference ; Conference date: 03-09-2018 Through 06-09-2018",

year = "2018",

month = sep,

day = "4",

language = "English",

booktitle = "44th European Solid-State Circuits Conference (ESSCIRC) 2018",

publisher = "IEEE",

}

A 192 x 128 time correlated single photon counting imager in 40nm CMOS technology. / Henderson, Robert K.; Johnston, Nick; Chen, Haochang ; Li, David Day-Uei; Hungerford, Graham; Hirsch, Richard; Yip, Philip; McLoskey, David; Birch, David.

44th European Solid-State Circuits Conference (ESSCIRC) 2018. Piscataway, NJ : IEEE, 2018.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - A 192 x 128 time correlated single photon counting imager in 40nm CMOS technology

AU - Henderson, Robert K.

AU - Johnston, Nick

AU - Chen, Haochang

AU - Li, David Day-Uei

AU - Hungerford, Graham

AU - Hirsch, Richard

AU - Yip, Philip

AU - McLoskey, David

AU - Birch, David

N1 - © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2018/9/4

Y1 - 2018/9/4

N2 - A 192 x 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) image sensor is implemented in STMicroelectronics 40nm CMOS technology. The 13 % fill-factor, 18.4 x 9.2 mm pixel contains a 33 ps resolution, 135 ns full-scale, 12-bit time to digital converter (TDC) with 0.9 LSB differential and 8.7 LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219 ps fullwidth half maximum (FWHM) impulse response function (IRF) and a 5 mW core power consumption and is operable at up to 18.6 kfps. Cylindrical microlenses with a concentration factor of 3.15 increase the fill-factor to 41%. The median dark count rate (DCR) is 25 Hz at 1.5 V excess bias. Fluorescence lifetime imaging (FLIM) results are presented.

AB - A 192 x 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCPSC) image sensor is implemented in STMicroelectronics 40nm CMOS technology. The 13 % fill-factor, 18.4 x 9.2 mm pixel contains a 33 ps resolution, 135 ns full-scale, 12-bit time to digital converter (TDC) with 0.9 LSB differential and 8.7 LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219 ps fullwidth half maximum (FWHM) impulse response function (IRF) and a 5 mW core power consumption and is operable at up to 18.6 kfps. Cylindrical microlenses with a concentration factor of 3.15 increase the fill-factor to 41%. The median dark count rate (DCR) is 25 Hz at 1.5 V excess bias. Fluorescence lifetime imaging (FLIM) results are presented.

KW - single photon avalanche diode

KW - photon counting

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M3 - Conference contribution book

BT - 44th European Solid-State Circuits Conference (ESSCIRC) 2018

PB - IEEE

CY - Piscataway, NJ

T2 - 44th European Solid-State Circuits Conference

Y2 - 3 September 2018 through 6 September 2018

ER -

A 192 x 128 time correlated single photon counting imager in 40nm CMOS technology

Abstract

Conference

Keywords

Access to Document

UK Quantum Technology Hub in Quantum Enhanced Imaging (Quantic)

A rapid analysis platform for investigating the cellular locations of bacteria using two-photon fluorescence lifetime imaging microscopy

TCSPC camera for real time video rate FLIM acquisition based on CMOS technology

Cite this