Abstract
This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35/spl mu/m SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps/sub p-p/. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 /spl mu/m/sup 2/.
Original language | English |
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Title of host publication | 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test (VLSI-TSA-DAT). |
Place of Publication | Piscataway |
Publisher | IEEE |
Pages | 253-6 |
Number of pages | 4 |
ISBN (Print) | 0780390601 |
DOIs | |
Publication status | Published - 27 Apr 2005 |
Event | 2005 IEEE VLSI-TSA International Symposium on VLSI Design - Ambassador Hotel Hsinchu, Taiwan, Taiwan, Province of China Duration: 27 Apr 2005 → 29 Apr 2005 |
Conference
Conference | 2005 IEEE VLSI-TSA International Symposium on VLSI Design |
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Country | Taiwan, Province of China |
City | Taiwan |
Period | 27/04/05 → 29/04/05 |
Keywords
- diode lasers
- BiCMOS integrated circuits
- optical design
- silicon germanium
- germanium silicon alloys
- capacitors
- bandwidth
- photonic band gap
- semiconductor device measurement
- time measurement