A 10-Gb/s laser diode driver in 0.35um BiCMOS technology

Teng-Yi Wang, Wei-Zen Chen, Chia-Ming Tsai, Li-Ren Huang, Day-Uei Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

2 Citations (Scopus)


This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35/spl mu/m SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps/sub p-p/. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 /spl mu/m/sup 2/.
Original languageEnglish
Title of host publication2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test (VLSI-TSA-DAT).
Place of PublicationPiscataway
Number of pages4
ISBN (Print) 0780390601
Publication statusPublished - 27 Apr 2005
Event2005 IEEE VLSI-TSA International Symposium on VLSI Design - Ambassador Hotel Hsinchu, Taiwan, Taiwan
Duration: 27 Apr 200529 Apr 2005


Conference2005 IEEE VLSI-TSA International Symposium on VLSI Design


  • diode lasers
  • BiCMOS integrated circuits
  • optical design
  • silicon germanium
  • germanium silicon alloys
  • capacitors
  • bandwidth
  • photonic band gap
  • semiconductor device measurement
  • time measurement


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