A 10-Gb/s laser diode driver in 0.35um BiCMOS technology

Teng-Yi Wang; Wei-Zen Chen; Chia-Ming Tsai; Li-Ren Huang; Day-Uei Li

doi:10.1109/VDAT.2005.1500068

A 10-Gb/s laser diode driver in 0.35um BiCMOS technology

Teng-Yi Wang, Wei-Zen Chen, Chia-Ming Tsai, Li-Ren Huang, Day-Uei Li

Strathclyde Institute Of Pharmacy And Biomedical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

2 Citations (Scopus)

Abstract

This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35/spl mu/m SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps/sub p-p/. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 /spl mu/m/sup 2/.

Original language	English
Title of host publication	2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test (VLSI-TSA-DAT).
Place of Publication	Piscataway
Publisher	IEEE
Pages	253-6
Number of pages	4
ISBN (Print)	0780390601
DOIs	https://doi.org/10.1109/VDAT.2005.1500068
Publication status	Published - 27 Apr 2005
Event	2005 IEEE VLSI-TSA International Symposium on VLSI Design - Ambassador Hotel Hsinchu, Taiwan, Taiwan, Province of China Duration: 27 Apr 2005 → 29 Apr 2005

Conference

Conference	2005 IEEE VLSI-TSA International Symposium on VLSI Design
Country	Taiwan, Province of China
City	Taiwan
Period	27/04/05 → 29/04/05

Keywords

diode lasers
BiCMOS integrated circuits
optical design
silicon germanium
germanium silicon alloys
capacitors
bandwidth
photonic band gap
semiconductor device measurement
time measurement

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Cite this

@inproceedings{82a6d0bb2ea940fba379187409882d1f,

title = "A 10-Gb/s laser diode driver in 0.35um BiCMOS technology",

abstract = "This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35/spl mu/m SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps/sub p-p/. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 /spl mu/m/sup 2/.",

keywords = "diode lasers, BiCMOS integrated circuits, optical design, silicon germanium, germanium silicon alloys, capacitors, bandwidth, photonic band gap, semiconductor device measurement, time measurement",

author = "Teng-Yi Wang and Wei-Zen Chen and Chia-Ming Tsai and Li-Ren Huang and Day-Uei Li",

year = "2005",

month = apr,

day = "27",

doi = "10.1109/VDAT.2005.1500068",

language = "English",

isbn = " 0780390601",

pages = "253--6",

booktitle = "2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test (VLSI-TSA-DAT).",

publisher = "IEEE",

note = "2005 IEEE VLSI-TSA International Symposium on VLSI Design ; Conference date: 27-04-2005 Through 29-04-2005",

}

Wang, T-Y, Chen, W-Z, Tsai, C-M, Huang, L-R & Li, D-U 2005, A 10-Gb/s laser diode driver in 0.35um BiCMOS technology. in 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test (VLSI-TSA-DAT). . IEEE, Piscataway, pp. 253-6, 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Taiwan, Taiwan, Province of China, 27/04/05. https://doi.org/10.1109/VDAT.2005.1500068

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T1 - A 10-Gb/s laser diode driver in 0.35um BiCMOS technology

AU - Wang, Teng-Yi

AU - Chen, Wei-Zen

AU - Tsai, Chia-Ming

AU - Huang, Li-Ren

AU - Li, Day-Uei

PY - 2005/4/27

Y1 - 2005/4/27

N2 - This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35/spl mu/m SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps/sub p-p/. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 /spl mu/m/sup 2/.

AB - This paper describes the design of a 10Gb/s laser diode (LD) driver in a 0.35/spl mu/m SiGe BiCMOS technology. The LD driver delivers a biased current up to 60 mA, and a modulation current ranges from 40 mA to 100 mA. High speed operation as well as high current driving capability are achieved by means of push-pull current switching scheme. In addition, negative Miller capacitor compensation technique is adopted to enhance the signal bandwidth. The output swing of the predriver is dynamically adjustable to compromise between operating speed and overshoot. Both the modulation and biased currents are derived from a bandgap reference source. The measured rise/fall time is 47ps, and timing jitter is 22.2ps/sub p-p/. The eye diagrams meet the specifications defined by SONET OC-192 and 10G Ethernet eye mask. Operating under 3.3V/7V supply, the total power consumption is 1.38W. Chip size is 1430 x 940 /spl mu/m/sup 2/.

KW - diode lasers

KW - BiCMOS integrated circuits

KW - optical design

KW - silicon germanium

KW - germanium silicon alloys

KW - capacitors

KW - bandwidth

KW - photonic band gap

KW - semiconductor device measurement

KW - time measurement

U2 - 10.1109/VDAT.2005.1500068

DO - 10.1109/VDAT.2005.1500068

M3 - Conference contribution book

SN - 0780390601

SP - 253

EP - 256

BT - 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test (VLSI-TSA-DAT).

PB - IEEE

CY - Piscataway

T2 - 2005 IEEE VLSI-TSA International Symposium on VLSI Design

Y2 - 27 April 2005 through 29 April 2005

ER -