A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

J.M. Hopkins, S.A. Smith, Chan-Wook Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa

Research output: Contribution to journalArticle

141 Citations (Scopus)

Abstract

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.

LanguageEnglish
Pages30-31
Number of pages2
JournalElectronics Letters
Volume40
Issue number1
DOIs
Publication statusPublished - Jan 2004

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Surface emitting lasers
Diamonds
Diodes
Single crystals

Keywords

  • distributed Bragg reflectors
  • surface emitting lasers
  • quantum well lasers
  • optical windows
  • laser mirrors
  • indium compounds
  • heat sinks
  • gallium arsenide
  • III-V semiconductors
  • diamond
  • GaInNAs
  • vertical external cavity

Cite this

Hopkins, J. M., Smith, S. A., Jeon, C-W., Sun, H. D., Burns, D., Calvez, S., ... Pessa, M. (2004). A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm. Electronics Letters, 40(1), 30-31. https://doi.org/10.1049/el:20040049
Hopkins, J.M. ; Smith, S.A. ; Jeon, Chan-Wook ; Sun, H.D. ; Burns, D. ; Calvez, S. ; Dawson, M.D. ; Jouhti, T. ; Pessa, M. / A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm. In: Electronics Letters. 2004 ; Vol. 40, No. 1. pp. 30-31.
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abstract = "What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.",
keywords = "distributed Bragg reflectors, surface emitting lasers , quantum well lasers , optical windows , laser mirrors , indium compounds , heat sinks , gallium arsenide , III-V semiconductors, diamond, GaInNAs, vertical external cavity",
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Hopkins, JM, Smith, SA, Jeon, C-W, Sun, HD, Burns, D, Calvez, S, Dawson, MD, Jouhti, T & Pessa, M 2004, 'A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm' Electronics Letters, vol. 40, no. 1, pp. 30-31. https://doi.org/10.1049/el:20040049

A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm. / Hopkins, J.M.; Smith, S.A.; Jeon, Chan-Wook; Sun, H.D.; Burns, D.; Calvez, S.; Dawson, M.D.; Jouhti, T.; Pessa, M.

In: Electronics Letters, Vol. 40, No. 1, 01.2004, p. 30-31.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

AU - Hopkins, J.M.

AU - Smith, S.A.

AU - Jeon, Chan-Wook

AU - Sun, H.D.

AU - Burns, D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

PY - 2004/1

Y1 - 2004/1

N2 - What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.

AB - What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.

KW - distributed Bragg reflectors

KW - surface emitting lasers

KW - quantum well lasers

KW - optical windows

KW - laser mirrors

KW - indium compounds

KW - heat sinks

KW - gallium arsenide

KW - III-V semiconductors

KW - diamond

KW - GaInNAs

KW - vertical external cavity

U2 - 10.1049/el:20040049

DO - 10.1049/el:20040049

M3 - Article

VL - 40

SP - 30

EP - 31

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -

Hopkins JM, Smith SA, Jeon C-W, Sun HD, Burns D, Calvez S et al. A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm. Electronics Letters. 2004 Jan;40(1):30-31. https://doi.org/10.1049/el:20040049