A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.
Original languageEnglish
Title of host publicationLasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
PublisherIEEE
Pages329-330
Number of pages1
Volume1
ISBN (Print)0-7803-7500-9
DOIs
Publication statusPublished - 2002

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Keywords

  • III-V semiconductors
  • aluminium compounds
  • gallium arsenide
  • laser accessories
  • laser cavity resonators
  • laser transitions
  • optical pumping
  • quantum well lasers
  • surface emitting lasers
  • GaAs
  • SiC
  • VECSEL
  • available output power
  • heat spreader material
  • intra-cavity silicon carbide heat spreader
  • pump power silicon carbide
  • vertical external-cavity surface-emitting laser spectrum
  • wavelength shift
  • AlxGa1-xAs

Cite this

Hastie, J. E., Jeon, C. W., Burns, D., Hopkins, J. M., Calvez, S., Abram, R. H., & Dawson, M. D. (2002). A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader. In Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE (Vol. 1, pp. 329-330). IEEE. https://doi.org/10.1109/LEOS.2002.1134063