A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader

J.E. Hastie; C.W. Jeon; D. Burns; J.M. Hopkins; S. Calvez; R.H. Abram; M.D. Dawson

doi:10.1109/LEOS.2002.1134063

A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.

Original language	English
Title of host publication	Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Place of Publication	Piscataway, N.J.
Publisher	IEEE
Pages	329-330
Number of pages	1
Volume	1
ISBN (Print)	0780375009
DOIs	https://doi.org/10.1109/LEOS.2002.1134063
Publication status	Published - 6 Jan 2003

Keywords

III-V semiconductors
aluminium compounds
gallium arsenide
laser accessories
laser cavity resonators
laser transitions
optical pumping
quantum well lasers
surface emitting lasers
GaAs
SiC
VECSEL
available output power
heat spreader material
intra-cavity silicon carbide heat spreader
pump power silicon carbide
vertical external-cavity surface-emitting laser spectrum
wavelength shift
AlxGa1-xAs

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10.1109/LEOS.2002.1134063

Cite this

@inproceedings{278044ca63724f19b184ad4ebe386232,

title = "A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader",

abstract = "A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.",

keywords = "III-V semiconductors, aluminium compounds, gallium arsenide, laser accessories, laser cavity resonators, laser transitions, optical pumping, quantum well lasers, surface emitting lasers, GaAs, SiC, VECSEL, available output power, heat spreader material, intra-cavity silicon carbide heat spreader, pump power silicon carbide, vertical external-cavity surface-emitting laser spectrum, wavelength shift, AlxGa1-xAs",

author = "J.E. Hastie and C.W. Jeon and D. Burns and J.M. Hopkins and S. Calvez and R.H. Abram and M.D. Dawson",

year = "2003",

month = jan,

day = "6",

doi = "10.1109/LEOS.2002.1134063",

language = "English",

isbn = "0780375009",

volume = "1",

pages = "329--330",

booktitle = "Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE",

publisher = "IEEE",

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TY - GEN

T1 - A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader

AU - Hastie, J.E.

AU - Jeon, C.W.

AU - Burns, D.

AU - Hopkins, J.M.

AU - Calvez, S.

AU - Abram, R.H.

AU - Dawson, M.D.

PY - 2003/1/6

Y1 - 2003/1/6

N2 - A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.

AB - A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.

KW - III-V semiconductors

KW - aluminium compounds

KW - gallium arsenide

KW - laser accessories

KW - laser cavity resonators

KW - laser transitions

KW - optical pumping

KW - quantum well lasers

KW - surface emitting lasers

KW - GaAs

KW - SiC

KW - VECSEL

KW - available output power

KW - heat spreader material

KW - intra-cavity silicon carbide heat spreader

KW - pump power silicon carbide

KW - vertical external-cavity surface-emitting laser spectrum

KW - wavelength shift

KW - AlxGa1-xAs

U2 - 10.1109/LEOS.2002.1134063

DO - 10.1109/LEOS.2002.1134063

M3 - Conference contribution book

SN - 0780375009

VL - 1

SP - 329

EP - 330

BT - Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

PB - IEEE

CY - Piscataway, N.J.

ER -

A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader

Abstract

Keywords

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