A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson, Guenter Huber (Editor), Ivan A. Scherbakov (Editor), Vladislav Y. Panchenko (Editor)

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.
LanguageEnglish
Title of host publicationInternational Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
Pages201-206
Number of pages6
Volume5137
DOIs
Publication statusPublished - 6 Oct 2003

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surface emitting lasers
silicon carbides
cavities
pumps
liquid cooling
thermal conductivity
scaling
output
room temperature
temperature

Keywords

  • AlGaAs
  • VECSEL
  • intracavity
  • silicon carbide heatspreader

Cite this

Hastie, J. E., Jeon, C. W., Burns, D., Hopkins, J. M., Calvez, S., Abram, R. H., ... Panchenko, V. Y. (Ed.) (2003). A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. In International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems (Vol. 5137, pp. 201-206) https://doi.org/10.1117/12.517987
Hastie, J.E. ; Jeon, C.W. ; Burns, D. ; Hopkins, J.M. ; Calvez, S. ; Abram, R.H. ; Dawson, M.D. ; Huber, Guenter (Editor) ; Scherbakov, Ivan A. (Editor) ; Panchenko, Vladislav Y. (Editor). / A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems. Vol. 5137 2003. pp. 201-206
@inbook{3e78c83242144323a9a01c750f78693c,
title = "A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader",
abstract = "High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.",
keywords = "AlGaAs, VECSEL, intracavity, silicon carbide heatspreader",
author = "J.E. Hastie and C.W. Jeon and D. Burns and J.M. Hopkins and S. Calvez and R.H. Abram and M.D. Dawson and Guenter Huber and Scherbakov, {Ivan A.} and Panchenko, {Vladislav Y.}",
year = "2003",
month = "10",
day = "6",
doi = "10.1117/12.517987",
language = "English",
isbn = "9780819450050",
volume = "5137",
pages = "201--206",
booktitle = "International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems",

}

Hastie, JE, Jeon, CW, Burns, D, Hopkins, JM, Calvez, S, Abram, RH, Dawson, MD, Huber, G (ed.), Scherbakov, IA (ed.) & Panchenko, VY (ed.) 2003, A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. in International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems. vol. 5137, pp. 201-206. https://doi.org/10.1117/12.517987

A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. / Hastie, J.E.; Jeon, C.W.; Burns, D.; Hopkins, J.M.; Calvez, S.; Abram, R.H.; Dawson, M.D.; Huber, Guenter (Editor); Scherbakov, Ivan A. (Editor); Panchenko, Vladislav Y. (Editor).

International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems. Vol. 5137 2003. p. 201-206.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

AU - Hastie, J.E.

AU - Jeon, C.W.

AU - Burns, D.

AU - Hopkins, J.M.

AU - Calvez, S.

AU - Abram, R.H.

AU - Dawson, M.D.

A2 - Huber, Guenter

A2 - Scherbakov, Ivan A.

A2 - Panchenko, Vladislav Y.

PY - 2003/10/6

Y1 - 2003/10/6

N2 - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

AB - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

KW - AlGaAs

KW - VECSEL

KW - intracavity

KW - silicon carbide heatspreader

U2 - 10.1117/12.517987

DO - 10.1117/12.517987

M3 - Chapter

SN - 9780819450050

VL - 5137

SP - 201

EP - 206

BT - International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems

ER -

Hastie JE, Jeon CW, Burns D, Hopkins JM, Calvez S, Abram RH et al. A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. In International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems. Vol. 5137. 2003. p. 201-206 https://doi.org/10.1117/12.517987