A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson, Guenter Huber (Editor), Ivan A. Scherbakov (Editor), Vladislav Y. Panchenko (Editor)

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.
Original languageEnglish
Title of host publicationInternational Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
Pages201-206
Number of pages6
Volume5137
DOIs
Publication statusPublished - 6 Oct 2003

Keywords

  • AlGaAs
  • VECSEL
  • intracavity
  • silicon carbide heatspreader

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    Hastie, J. E., Jeon, C. W., Burns, D., Hopkins, J. M., Calvez, S., Abram, R. H., ... Panchenko, V. Y. (Ed.) (2003). A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. In International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems (Vol. 5137, pp. 201-206) https://doi.org/10.1117/12.517987