A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

J.E. Hastie; C.W. Jeon; D. Burns; J.M. Hopkins; S. Calvez; R.H. Abram; M.D. Dawson; Guenter Huber; Ivan A. Scherbakov; Vladislav Y. Panchenko

doi:10.1117/12.517987

A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson, Guenter Huber (Editor), Ivan A. Scherbakov (Editor), Vladislav Y. Panchenko (Editor)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

Original language	English
Title of host publication	International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
Place of Publication	Bellingham
Pages	201-206
Number of pages	6
Volume	5137
DOIs	https://doi.org/10.1117/12.517987
Publication status	Published - 6 Oct 2003

Keywords

AlGaAs
VECSEL
intracavity
silicon carbide heatspreader

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Hastie, J. E., Jeon, C. W., Burns, D., Hopkins, J. M., Calvez, S., Abram, R. H., Dawson, M. D., Huber, G. (Ed.), Scherbakov, I. A. (Ed.), & Panchenko, V. Y. (Ed.) (2003). A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. In International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems (Vol. 5137, pp. 201-206). https://doi.org/10.1117/12.517987

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title = "A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader",

abstract = "High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.",

keywords = "AlGaAs, VECSEL, intracavity, silicon carbide heatspreader",

author = "J.E. Hastie and C.W. Jeon and D. Burns and J.M. Hopkins and S. Calvez and R.H. Abram and M.D. Dawson and Guenter Huber and Scherbakov, {Ivan A.} and Panchenko, {Vladislav Y.}",

year = "2003",

month = oct,

day = "6",

doi = "10.1117/12.517987",

language = "English",

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booktitle = "International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems",

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Hastie, JE, Jeon, CW, Burns, D, Hopkins, JM, Calvez, S, Abram, RH, Dawson, MD, Huber, G (ed.), Scherbakov, IA (ed.) & Panchenko, VY (ed.) 2003, A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader. in International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems. vol. 5137, Bellingham, pp. 201-206. https://doi.org/10.1117/12.517987

TY - GEN

T1 - A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

AU - Hastie, J.E.

AU - Jeon, C.W.

AU - Burns, D.

AU - Hopkins, J.M.

AU - Calvez, S.

AU - Abram, R.H.

AU - Dawson, M.D.

A2 - Huber, Guenter

A2 - Scherbakov, Ivan A.

A2 - Panchenko, Vladislav Y.

PY - 2003/10/6

Y1 - 2003/10/6

N2 - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

AB - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

KW - AlGaAs

KW - VECSEL

KW - intracavity

KW - silicon carbide heatspreader

U2 - 10.1117/12.517987

DO - 10.1117/12.517987

M3 - Conference contribution book

SN - 9780819450050

VL - 5137

SP - 201

EP - 206

BT - International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems

CY - Bellingham

ER -

A 0.5W 850nm Al(x)Ga(1-x)As VECSEL with intracavity silicon carbide heatspreader

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Keywords

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