A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.
Original languageEnglish
Number of pages5
Publication statusPublished - Jun 2002
EventInternational Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems - Moscow, Russia, Russian Federation
Duration: 22 Jun 200228 Jun 2002

Conference

ConferenceInternational Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
CountryRussian Federation
CityMoscow, Russia
Period22/06/0228/06/02

Keywords

  • optics
  • photonics
  • intra-cavity crystalline heatspreaders
  • vertical external-cavity surface-emitting lasers
  • silicon carbide heatspreader

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    Hastie, J. E., Jeon, C. W., Burns, D., Hopkins, J. M., Calvez, S., Abram, R. H., & Dawson, M. D. (2002). A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader. Paper presented at International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, Moscow, Russia, Russian Federation.