A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.
Original languageEnglish
Number of pages5
Publication statusPublished - Jun 2002
EventInternational Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems - Moscow, Russia
Duration: 22 Jun 200228 Jun 2002

Conference

ConferenceInternational Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
CityMoscow, Russia
Period22/06/0228/06/02

Fingerprint

surface emitting lasers
silicon carbides
cavities
pumps
liquid cooling
thermal conductivity
scaling
output
room temperature
temperature

Keywords

  • optics
  • photonics
  • intra-cavity crystalline heatspreaders
  • vertical external-cavity surface-emitting lasers
  • silicon carbide heatspreader

Cite this

Hastie, J. E., Jeon, C. W., Burns, D., Hopkins, J. M., Calvez, S., Abram, R. H., & Dawson, M. D. (2002). A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader. Paper presented at International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, Moscow, Russia, .
Hastie, J.E. ; Jeon, C.W. ; Burns, D. ; Hopkins, J.M. ; Calvez, S. ; Abram, R.H. ; Dawson, M.D. / A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader. Paper presented at International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, Moscow, Russia, .5 p.
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abstract = "High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.",
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year = "2002",
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Hastie, JE, Jeon, CW, Burns, D, Hopkins, JM, Calvez, S, Abram, RH & Dawson, MD 2002, 'A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader' Paper presented at International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, Moscow, Russia, 22/06/02 - 28/06/02, .

A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader. / Hastie, J.E.; Jeon, C.W.; Burns, D.; Hopkins, J.M.; Calvez, S.; Abram, R.H.; Dawson, M.D.

2002. Paper presented at International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, Moscow, Russia, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

AU - Hastie, J.E.

AU - Jeon, C.W.

AU - Burns, D.

AU - Hopkins, J.M.

AU - Calvez, S.

AU - Abram, R.H.

AU - Dawson, M.D.

PY - 2002/6

Y1 - 2002/6

N2 - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

AB - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

KW - optics

KW - photonics

KW - intra-cavity crystalline heatspreaders

KW - vertical external-cavity surface-emitting lasers

KW - silicon carbide heatspreader

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M3 - Paper

ER -

Hastie JE, Jeon CW, Burns D, Hopkins JM, Calvez S, Abram RH et al. A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader. 2002. Paper presented at International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, Moscow, Russia, .