A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

J.E. Hastie; C.W. Jeon; D. Burns; J.M. Hopkins; S. Calvez; R.H. Abram; M.D. Dawson

A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

J.E. Hastie, C.W. Jeon, D. Burns, J.M. Hopkins, S. Calvez, R.H. Abram, M.D. Dawson

Research output: Contribution to conference › Paper › peer-review

Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

Original language	English
Number of pages	5
Publication status	Published - Jun 2002
Event	International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems - Moscow, Russia, Russian Federation Duration: 22 Jun 2002 → 28 Jun 2002

Conference

Conference	International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
Country/Territory	Russian Federation
City	Moscow, Russia
Period	22/06/02 → 28/06/02

Keywords

optics
photonics
intra-cavity crystalline heatspreaders
vertical external-cavity surface-emitting lasers
silicon carbide heatspreader

Cite this

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title = "A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader",

abstract = "High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.",

keywords = "optics, photonics, intra-cavity crystalline heatspreaders, vertical external-cavity surface-emitting lasers, silicon carbide heatspreader",

author = "J.E. Hastie and C.W. Jeon and D. Burns and J.M. Hopkins and S. Calvez and R.H. Abram and M.D. Dawson",

year = "2002",

month = jun,

language = "English",

note = "International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems ; Conference date: 22-06-2002 Through 28-06-2002",

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TY - CONF

T1 - A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

AU - Hastie, J.E.

AU - Jeon, C.W.

AU - Burns, D.

AU - Hopkins, J.M.

AU - Calvez, S.

AU - Abram, R.H.

AU - Dawson, M.D.

PY - 2002/6

Y1 - 2002/6

N2 - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

AB - High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

KW - optics

KW - photonics

KW - intra-cavity crystalline heatspreaders

KW - vertical external-cavity surface-emitting lasers

KW - silicon carbide heatspreader

UR - http://spiedigitallibrary.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PSISDG005137000001000201000001&idtype=cvips&gifs=Yes&bproc=volrange&scode=5100%20-%205199

M3 - Paper

T2 - International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems

Y2 - 22 June 2002 through 28 June 2002

ER -

A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

Abstract

Conference

Keywords

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