The fabrication and performance of GaN-based micro-light emitting diode (g-LED) arrays with 64×64 elements is reported. The diameter of each element is 20 μm and center-to-center spacing of 30 μm, giving an overall active area of the arrays of 80425 μm2. With the introduction of a matrix addressing scheme, the number of bond pads has been reduced from n2 to 2n, facilitating the packaging of the devices. The arrays emit >50 μW per element at 3mA drive current. The advances in fabrication and performance reported in this work bring these arrays to the threshold of advanced research and commercial applications in areas of micro-displays, sensing, biophotonics and data-communications.
|Title of host publication||Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE|
|Number of pages||1|
|Publication status||Published - 14 Nov 2002|
- LED displays
- gallium compounds
- light emitting diodes
- optical arrays
- semiconductor device packaging
- wide band gap semiconductors
Jeon, C. W., Choi, H. W., Edwards, P. R., Bryce, A. C., & Dawson, M. D. (2002). 64 x 64 matrix-addressable arrays of GaN-based micro-LEDs. In Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE (Vol. 2, pp. 685-686). IEEE.