4W single transverse-mode VECSEL utilising intra-cavity diamond heat spreader

A. Harkonen, S. Suomalainen, E. Saarinen, L. Orsila, R. Koskinen, O. Okhotnikov, S. Calvez, M.D. Dawson

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

An optically pumped semiconductor vertical external cavity surface emitting laser, with high output power and excellent beam quality operating at a wavelength near 1.05 mm, is reported. A transparent diamond heat spreader was used for thermal management of the laser.The gain structure grown by molecular beam epitaxy includes 13 compressively strained InGaAs quantum wells. Maximum output power of 4 W with diffraction-limited beam (M21.15) was achieved using a 2% output coupler and incident pump power of 20 W. It is shown that power scalability is feasible with the presented laser geometry.
Original languageEnglish
Pages (from-to)693-694
Number of pages1
JournalElectronics Letters
Volume42
Issue number12
DOIs
Publication statusPublished - 8 Jun 2006

Keywords

  • surface emitting laser
  • thermal management
  • laser geometry

Fingerprint Dive into the research topics of '4W single transverse-mode VECSEL utilising intra-cavity diamond heat spreader'. Together they form a unique fingerprint.

Cite this