3-D mapping of strain and defects in a ZnSe epilayer using a variable energy electron beam

C. Trager-Cowan, A. M. Paterson, R. W. Martin, K. P. O'Donnell, J. T. Mullins, G. Horsburgh, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalConference article

Abstract

An electron beam with energy varying between 12 and 30keV was used to investigate the variation in strain as a function of lateral position and as a function of depth in a 2.7μm, nominally undoped ZnSe epilayer. The position dependence of low temperature cathodoluminescence spectra reveals the strain and impurity concentration along the layer to be non-uniform. The lateral distribution of impurities allows their tentative identification. The depth profile shows a correlation between the distribution of misfit dislocations and impurities in the layer.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalMaterials Science Forum
Volume182-184
Publication statusPublished - 1 Jan 1995
EventProceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria
Duration: 26 Sep 199428 Sep 1994

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    Trager-Cowan, C., Paterson, A. M., Martin, R. W., O'Donnell, K. P., Mullins, J. T., Horsburgh, G., Prior, K. A., & Cavenett, B. C. (1995). 3-D mapping of strain and defects in a ZnSe epilayer using a variable energy electron beam. Materials Science Forum, 182-184, 163-166.