An electron beam with energy varying between 12 and 30keV was used to investigate the variation in strain as a function of lateral position and as a function of depth in a 2.7μm, nominally undoped ZnSe epilayer. The position dependence of low temperature cathodoluminescence spectra reveals the strain and impurity concentration along the layer to be non-uniform. The lateral distribution of impurities allows their tentative identification. The depth profile shows a correlation between the distribution of misfit dislocations and impurities in the layer.
|Number of pages||4|
|Journal||Materials Science Forum|
|Publication status||Published - 1 Jan 1995|
|Event||Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria|
Duration: 26 Sept 1994 → 28 Sept 1994