Abstract
An electron beam with energy varying between 12 and 30keV was used to investigate the variation in strain as a function of lateral position and as a function of depth in a 2.7μm, nominally undoped ZnSe epilayer. The position dependence of low temperature cathodoluminescence spectra reveals the strain and impurity concentration along the layer to be non-uniform. The lateral distribution of impurities allows their tentative identification. The depth profile shows a correlation between the distribution of misfit dislocations and impurities in the layer.
Original language | English |
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Pages (from-to) | 163-166 |
Number of pages | 4 |
Journal | Materials Science Forum |
Volume | 182-184 |
Publication status | Published - 1 Jan 1995 |
Event | Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria Duration: 26 Sept 1994 → 28 Sept 1994 |