2D assemblies of silicon nanocrystallites prepared by sol-gel method from triethoxysilane

Jerôme Rouquette, Monique Pauthe, Michel Ramonda, Thierry Taliercio, Bernard Gil, Kevin P. O'Donnell

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The sol-gel route using triethoxysilane as a precursor has been used to prepare films of Si nanocrystallites. These films were deposited on (001)-oriented silicon substrates either by spin coating deposition of a liquid phase that was further heat-treated under static vacuum (dots embedded in silica gel) or by vapour phase from the thermal decomposition under vacuum of the dried gels (uncapped dots). We address the structural characterisation of these samples and we find that a spontaneous orientation of the crystallites is obtained for heating treatment beyond 800°C if the dots are deposited in the vapour phase. The optical properties of dots embedded in silica gel reveal a strong red-orange photoluminescence due to carrier recombination at the dot surface, which is noticeably contaminated by oxygen and hydrogen.

LanguageEnglish
Pages461-467
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume737
Publication statusPublished - 25 Jul 2003
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: 2 Dec 20025 Dec 2002

Fingerprint

Nanocrystallites
Silica Gel
Silica gel
silica gel
Silicon
assemblies
Sol-gel process
Vapors
gels
Vacuum
vapor phases
vacuum
Spin coating
silicon
Crystallites
Crystal orientation
crystallites
thermal decomposition
Sol-gels
coating

Keywords

  • nanostructured materials
  • characterization
  • crystal orientation
  • crystal structure
  • film preparation
  • heat treatment
  • photoluminescence
  • pyrolysis
  • semiconducting silicon
  • silanes
  • sol-gels
  • spin coating
  • two dimensional

Cite this

Rouquette, Jerôme ; Pauthe, Monique ; Ramonda, Michel ; Taliercio, Thierry ; Gil, Bernard ; O'Donnell, Kevin P. / 2D assemblies of silicon nanocrystallites prepared by sol-gel method from triethoxysilane. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 737. pp. 461-467.
@article{639d9975fb514e5d9ea4fc95ebeb5f56,
title = "2D assemblies of silicon nanocrystallites prepared by sol-gel method from triethoxysilane",
abstract = "The sol-gel route using triethoxysilane as a precursor has been used to prepare films of Si nanocrystallites. These films were deposited on (001)-oriented silicon substrates either by spin coating deposition of a liquid phase that was further heat-treated under static vacuum (dots embedded in silica gel) or by vapour phase from the thermal decomposition under vacuum of the dried gels (uncapped dots). We address the structural characterisation of these samples and we find that a spontaneous orientation of the crystallites is obtained for heating treatment beyond 800°C if the dots are deposited in the vapour phase. The optical properties of dots embedded in silica gel reveal a strong red-orange photoluminescence due to carrier recombination at the dot surface, which is noticeably contaminated by oxygen and hydrogen.",
keywords = "nanostructured materials, characterization, crystal orientation, crystal structure, film preparation, heat treatment, photoluminescence, pyrolysis, semiconducting silicon, silanes, sol-gels, spin coating, two dimensional",
author = "Jer{\^o}me Rouquette and Monique Pauthe and Michel Ramonda and Thierry Taliercio and Bernard Gil and O'Donnell, {Kevin P.}",
year = "2003",
month = "7",
day = "25",
language = "English",
volume = "737",
pages = "461--467",
journal = "MRS Online Proceedings Library",
issn = "1946-4274",

}

2D assemblies of silicon nanocrystallites prepared by sol-gel method from triethoxysilane. / Rouquette, Jerôme; Pauthe, Monique; Ramonda, Michel; Taliercio, Thierry; Gil, Bernard; O'Donnell, Kevin P.

In: Materials Research Society Symposium - Proceedings, Vol. 737, 25.07.2003, p. 461-467.

Research output: Contribution to journalConference article

TY - JOUR

T1 - 2D assemblies of silicon nanocrystallites prepared by sol-gel method from triethoxysilane

AU - Rouquette, Jerôme

AU - Pauthe, Monique

AU - Ramonda, Michel

AU - Taliercio, Thierry

AU - Gil, Bernard

AU - O'Donnell, Kevin P.

PY - 2003/7/25

Y1 - 2003/7/25

N2 - The sol-gel route using triethoxysilane as a precursor has been used to prepare films of Si nanocrystallites. These films were deposited on (001)-oriented silicon substrates either by spin coating deposition of a liquid phase that was further heat-treated under static vacuum (dots embedded in silica gel) or by vapour phase from the thermal decomposition under vacuum of the dried gels (uncapped dots). We address the structural characterisation of these samples and we find that a spontaneous orientation of the crystallites is obtained for heating treatment beyond 800°C if the dots are deposited in the vapour phase. The optical properties of dots embedded in silica gel reveal a strong red-orange photoluminescence due to carrier recombination at the dot surface, which is noticeably contaminated by oxygen and hydrogen.

AB - The sol-gel route using triethoxysilane as a precursor has been used to prepare films of Si nanocrystallites. These films were deposited on (001)-oriented silicon substrates either by spin coating deposition of a liquid phase that was further heat-treated under static vacuum (dots embedded in silica gel) or by vapour phase from the thermal decomposition under vacuum of the dried gels (uncapped dots). We address the structural characterisation of these samples and we find that a spontaneous orientation of the crystallites is obtained for heating treatment beyond 800°C if the dots are deposited in the vapour phase. The optical properties of dots embedded in silica gel reveal a strong red-orange photoluminescence due to carrier recombination at the dot surface, which is noticeably contaminated by oxygen and hydrogen.

KW - nanostructured materials

KW - characterization

KW - crystal orientation

KW - crystal structure

KW - film preparation

KW - heat treatment

KW - photoluminescence

KW - pyrolysis

KW - semiconducting silicon

KW - silanes

KW - sol-gels

KW - spin coating

KW - two dimensional

UR - http://www.scopus.com/inward/record.url?scp=0038488073&partnerID=8YFLogxK

M3 - Conference article

VL - 737

SP - 461

EP - 467

JO - MRS Online Proceedings Library

T2 - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

ER -